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Start Over Author "Goro Sasaki" Journal electronics letters
4 results on '"Goro Sasaki"'

1. Long wavelength pin/HBT optical receiver monolithically integrated with HBT comparator

Author

Michio Murata, Goro Sasaki, Sosaku Sawada, Kentaro Doguchi, Hiroshi Yano, and T. Kato

Subjects
Long wavelength, Materials science, Comparator, Preamplifier, business.industry, Heterojunction bipolar transistor, Electronic engineering, Bit error rate, Optoelectronics, Substrate (electronics), Electrical and Electronic Engineering, business, Sensitivity (electronics)
Abstract

A GaInAs pin PD, a GaInAs/InP HBT transimpedance-type preamplifier, and a GaInAs/InP HBT comparator have been monolithically integrated on an InP substrate with pin/HBT integration technology. The receiver OEIC with a comparator showed a sensitivity of –36.0 dBm at a bit error rate of 1 × 10-9 for 125 Mbit/s signals.

Published
1996
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2. Monolithic pin-HEMT receiver with internal equaliser for long-wavelength fibre optic communications

Author

H. Hayashi, H. Kamei, Goro Sasaki, Hiroshi Yano, and K. Aga

Subjects
Optical fiber, Materials science, business.industry, Amplifier, Optical communication, Electrical engineering, High-electron-mobility transistor, Equaliser, law.invention, Photodiode, High impedance, law, Optoelectronics, Electrical and Electronic Engineering, business, Sensitivity (electronics)
Abstract

An optical receiver, in which a GaInAs pin photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of −30.4 dBm was obtained at 1.2 Gbit/s and 1.3 μm wavelength.

Published
1990
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3. Monolithic pin-HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communications

Author

N. Kuwata, K. Yoshida, K. Koike, K. Ono, and Goro Sasaki

Subjects
Optical amplifier, Optical fiber, Materials science, business.industry, Amplifier, Optical communication, Substrate (electronics), High-electron-mobility transistor, Integrated circuit, Photodiode, law.invention, law, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

We have monolithically integrated a GaInAs pin-photodiode and an n-AlInAs/GaInAs HEMT amplifier on an InP substrate by OMVPE for long-wavelength fibre optic communications. The response of the pin-HEMT amplifiers for 1.6 Gbit/s (NRZ) signals has been obtained.

Published
1988
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4. High-performance Al0.48In0.52As/Ga0.47In0.53As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates

Author

Goro Sasaki, C.K. Nguyen, Rajaram Bhat, W. P. Hong, J.L. Gimlett, G.-K. Chang, and M.A. Koza

Subjects
Materials science, business.industry, Preamplifier, Transconductance, Detector, Electrical engineering, High-electron-mobility transistor, Chemical vapor deposition, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Integrated optics, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, business
Abstract

We report the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GalnAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260mS/mm. An excellent receiver response to l.7Gbit/s NRZ signals has been obtained.

Published
1989
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