Monolithic pin-HEMT receiver with internal equaliser for long-wavelength fibre optic communications

Authors :: H. Hayashi
H. Kamei
Goro Sasaki
Hiroshi Yano
K. Aga
Source :: Electronics Letters. 26:305
Publication Year :: 1990
Publisher :: Institution of Engineering and Technology (IET), 1990.
Abstract: An optical receiver, in which a GaInAs pin photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of −30.4 dBm was obtained at 1.2 Gbit/s and 1.3 μm wavelength.

Subjects :: Optical fiber
Materials science
business.industry
Amplifier
Optical communication
Electrical engineering
High-electron-mobility transistor
Equaliser
law.invention
Photodiode
High impedance
law
Optoelectronics
Electrical and Electronic Engineering
business
Sensitivity (electronics)

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