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In this paper, we used a novel carbide (or ceramer) as the carbon precursor and studied the effect of etching temperature on its compositional and structural evolution in chlorine condition. The ceramer produced from a commercially available polymethyl(phenyl) siloxane resin at 600 °C under nitrogen still includes some organic groups (e.g., Si H, Si CH3, Si Ar), which cannot survive in chlorine for 3 h in range of 450–900 °C. The ceramer can be completely converted to carbon while the etching temperature exceeds 600 °C. Higher ordering at elevated etching temperatures and apparent increasing of mesopores at 600 °C were observed.

The etching process of silicon carbide by dry chlorine was investigated as a function of etching temperature using a commercial available polymethyl(phenyl)siloxane resin. Results from etching rate show increasing etching temperature could lead to a change for etching mechanism from diffusion-controlling to interface reaction-controlling. The chlorination of β-SiC in this study should be managed at above 600 °C and can complete at 900 °C for 3 h. A pronounced core–shell structure was observed owing to the partial conversion. Silicon carbide derived carbons (SiC-DCs) are in highly microporosity, with single-modal pore size distributions at around 0.9 nm.