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Etching process of silicon carbide from polysiloxane by chlorine
- Source :
- Corrosion Science. 87:127-133
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- The etching process of silicon carbide by dry chlorine was investigated as a function of etching temperature using a commercial available polymethyl(phenyl)siloxane resin. Results from etching rate show increasing etching temperature could lead to a change for etching mechanism from diffusion-controlling to interface reaction-controlling. The chlorination of β-SiC in this study should be managed at above 600 °C and can complete at 900 °C for 3 h. A pronounced core–shell structure was observed owing to the partial conversion. Silicon carbide derived carbons (SiC-DCs) are in highly microporosity, with single-modal pore size distributions at around 0.9 nm.
- Subjects :
- Materials science
General Chemical Engineering
Etching rate
fungi
technology, industry, and agriculture
chemistry.chemical_element
Silicon oxycarbide
General Chemistry
Corrosion
chemistry.chemical_compound
stomatognathic system
chemistry
Chemical engineering
Etching (microfabrication)
Scientific method
Siloxane
Chlorine
Silicon carbide
Organic chemistry
General Materials Science
Subjects
Details
- ISSN :
- 0010938X
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Corrosion Science
- Accession number :
- edsair.doi...........f2b8ac64dd06ecdc96f1eea43d7adbf3