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Spin pumping at the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces has been studied by ferromagnetic resonance technology (FMR). The spin mixing conductance of the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces was determined to be 3.7×1019 m−2 and 2.1×1019 m−2 by comparing the Gilbert damping in a Co2FeAl0.5Si0.5 single film, Co2FeAl0.5Si0.5/Pt bilayer film and a Pt/Co2FeAl0.5Si0.5/Pt trilayer film. Spin pumping is more efficient in the Co2FeAl0.5Si0.5/Pt bilayer film than in permalloy/Pt bilayer film. [ABSTRACT FROM AUTHOR]

A face-to-face system of double-layer three-dimensional arrays of H-shaped plasmonic crystals is proposed, and its transmission and filtering properties are investigated in the terahertz regime. Simulation results show that our design has excellent filtering properties. It has an ultra-wide bandgap and passband with steep band-edges, and the transmittance of the passband and the forbidden band are very close to 1 and 0, respectively. As the distance between the two face-to-face plates increases, the resonance frequency exhibits a gradual blueshift from 0.88 THz to 1.30 THz. Therefore, we can dynamically control the bandwidths of bandgap and passband by adding a piezoelectric ceramic plate between the two crystal plates. Furthermore, the dispersion relations of modes and electric field distributions are presented to analyze the generation mechanisms of bandgaps and to explain the location of bandgaps and the frequency shift phenomenon. Due to the fact that our design can provide many resonant modes, the bandwidth of the bandgaps can be greatly broadened. This paper can serve as a valuable reference for the design of terahertz functional devices and three-dimensional terahertz metamaterials. [ABSTRACT FROM AUTHOR]

A novel organic—inorganic nanoparticle—photopolymer composite system is developed, and its fundamental holographic recording characteristics are studied. In this hydrophilic TiO2-nanoparticle-dispersed acrylamide photopolymer composite system, the counter-diffusion of monomers and nanoparticles plays a fundamental and key role in hologram grating formation. The experimental results indicate that the volume shrinkage of the nanoparticle—photopolymer film during the holographic recording can be drastically reduced compared with the undoped photopolymer film. It is also found that the diffraction efficiency of the grating recorded in the nanoparticle—photopolymer film depends strongly on the concentration of the TiO2-nanoparticles, and there exists an optimal TiO2-nanoparticle-doping concentration to make the diffraction efficiency and the refractive index modulation reach their maxima. Additionally, the digital data page is stored and reconstructed in the nanoparticle—photopolymer film. [ABSTRACT FROM AUTHOR]

In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate—drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD = 10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR. [ABSTRACT FROM AUTHOR]

In this paper, we present a simple theoretical approach to calculate the multiple ionization of big atoms and molecules induced by very high-q fast projectiles in a strong coupling regime (q/v > 1). The results obtained from this approach are in excellent agreement with the available experimental data. A probable scenario of molecular multiple ionization by fast and very high-q projectiles is discussed. The very small computational time required here and the good agreement with the existing experimental data make it a good candidate for studying the multiple ionization of complex molecules under high linear energy transfers. [ABSTRACT FROM AUTHOR]

A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications. [ABSTRACT FROM AUTHOR]

The ferromagnetic semiconductor La2NiMnO6 (LNMO) has recently received much attention due to its high Curie temperature (TC ∼ 280 K), which is close to room temperature. We prepared single-phase LNMO polycrystalline samples and investigated the temperature- and field-dependent magnetic behaviors of bulk LNMO. Between TC and T* = 300 K, we observed upward and downward deviations from the Curie—Weiss law for high and low magnetic fields, respectively. From the electron spin resonance results, we can exclude the existence of the Griffiths phase. On the contrary, our results indicate that the abnormal magnetic behaviors might be induced by antisite phase boundaries with antiferromagnetic interaction. [ABSTRACT FROM AUTHOR]

First-principles calculations are performed to explore the possibility of generating the two-dimensional electron gas (2DEG) at the interface between LaGaO3/KTaO3 and NdGaO3/KTaO3 (001) heterostructures. Two different models—i.e., the superlattice model and the thin film model—are used to conduct a comprehensive investigation of the origin of charge carriers. For the symmetric superlattice model, the LaGaO3 (or NdGaO3) film is nonpolar. The 2DEG with carrier density on the order of 1014 cm−2 originates from the Ta dxy electrons contributed by both LaGaO3 (or NdGaO3) and KTaO3. For the thin film model, large polar distortions occur in the LaGaO3 and NdGaO3 layer, which entirely screens the built-in electric field and prevents electrons from transferring to the interface. Electrons of KTaO3 are accumulated at the interface, contributing to the formation of the 2DEG. All the heterostructures exhibit conducting properties regardless of the film thickness. Compared with the Ti dxy electrons in SrTiO3-based heterostructures, the Ta dxy electrons have small effective mass and they are expected to move with higher mobility along the interface. These findings reveal the promising applications of 2DEG in novel nanoelectronic devices. [ABSTRACT FROM AUTHOR]

In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor (DH HEMT) with a gate-drain spacing . Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of merit for the circular HEMT is as high as . The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field. [ABSTRACT FROM AUTHOR]

The damage on the atomic bonding and electronic state in a SiOx(1.4–2.3 nm)/c-Si(150 m) interface has been investigated. This occurred in the process of depositing indium tin oxide (ITO) film onto the silicon substrate by magnetron sputtering. We observe that this damage is caused by energetic particles produced in the plasma (atoms, ions, and UV light). The passivation quality and the variation on interface states of the SiOx/c-Si system were mainly studied by using effective minority carrier lifetime () measurement as a potential evaluation. The results showed that the samples’ was reduced by more than 90% after ITO formation, declined from 107 s to 5 s. Following vacuum annealing at 200 C, the can be restored to 30 s. The components of Si to O bonding states at the SiOx/c-Si interface were analyzed by x-ray photoelectron spectroscopy (XPS) coupled with depth profiling. The amorphous phase of the SiOx layer and the “atomistic interleaving structure” at the SiOx/c-Si interface was observed by a transmission electron microscope (TEM). The chemical configuration of the Si–O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds (or interface states) and effective minority carrier lifetime. After an appropriate annealing, the reduction of the Si dangling bonds between SiOx and near the c-Si surface is helpful to improve the passivation effect. [ABSTRACT FROM AUTHOR]

Density functional theory within the local density approximation is used to investigate the effect of the oxygen vacancy on the LaGaO3/SrTiO3 (001) heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3rd layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas (2DEG), that is, the 2DEG still originates from the dxy electrons, which are split from the t2g states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3dx2−y2 orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction. [ABSTRACT FROM AUTHOR]

The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm∼ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. [ABSTRACT FROM AUTHOR]

We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F–) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP. [ABSTRACT FROM AUTHOR]

In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco—Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. [ABSTRACT FROM AUTHOR]

A non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor (quasi-E-DHEMT) with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering (DIBL) was presented. Due to the metal organic chemical vapor deposition (MOCVD) grown 9-nm undoped AlGaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas (2DEG) was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1-μm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of −6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V. [ABSTRACT FROM AUTHOR]