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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors.
- Source :
-
Chinese Physics B . Mar2015, Vol. 24 Issue 3, p1-1. 1p. - Publication Year :
- 2015
-
Abstract
- We present an AlGaN/GaN high-electron mobility transistor (HEMT) device with both field plate (FP) and low-density drain (LDD). The LDD is realized by the injection of negatively charged fluorine (F–) ions under low power in the space between the gate and the drain electrodes. With a small-size FP and a LDD length equal to only 31% of the gate-drain spacing, the device effectively modifies the electric field distribution and achieves a breakdown voltage enhancement up to two times when compared with a device with only FP. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FLUORINE
*ELECTRIC fields
*GALLIUM nitride
*ELECTRODES
*PHYSICS research
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 24
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 101147836
- Full Text :
- https://doi.org/10.1088/1674-1056/24/3/037304