1. Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate.
- Author
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He, Yuan-Hao, Mao, Wei, Du, Ming, Peng, Zi-Ling, Wang, Hai-Yong, Zheng, Xue-Feng, Wang, Chong, Zhang, Jin-Cheng, and Hao, Yue
- Subjects
TUNNEL field-effect transistors ,DOPING agents (Chemistry) ,HETEROJUNCTIONS ,METAL oxide semiconductor field-effect transistors ,TUNNEL junctions (Materials science) ,POWER electronics ,HOTELS ,DOPING in sports - Abstract
A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show I
ON of 4.45 × 10−5 A/μm, ION /IOFF ratio of 1013 , and SSavg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications. [ABSTRACT FROM AUTHOR]- Published
- 2021
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