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2 results on '"Mohamed Boukhicha"'

1. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author

Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, and Bernard Plaçais

Subjects
graphene transistor, velocity saturation, high-frequency, dirac pinch-off, contact gating, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz . We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Published
2020
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2. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author

Takashi Taniguchi, Bernard Plaçais, Emmanuel Baudin, Quentin Wilmart, Mohamed Boukhicha, Vincent Bouchiat, Emiliano Pallecchi, Kenji Watanabe, Erwann Bocquillon, Gwendal Fève, José Palomo, Holger Graef, M. Rosticher, Jean-Marc Berroir, David Mele, Laboratoire de physique de l'ENS - ENS Paris (LPENS), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL), Physique Mésoscopique, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)-Département de Physique de l'ENS-PSL, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), National Institute for Materials Science (NIMS), Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nano-Optique, Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), The research leading to these results have received partial funding from the European UnionHorizon 2020 research and innovation programme under grant No. 785219 'Graphene Core 2', and fromthe ANR-14-CE08-018-05 'GoBN'. The work of Q.W. was supported by a DGA-MRIS scholarship, ANR-14-CE08-0018,GoBN,Hétérostructures de graphènes blanc et noir(2014), European Project: 785219,H2020,GrapheneCore2(2018), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Systèmes hybrides de basse dimensionnalité (HYBRID), Carbon-IEMN (CARBON-IEMN), Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-École normale supérieure - Paris (ENS Paris)

Subjects
Materials science, Terahertz radiation, Physics::Optics, 02 engineering and technology, Substrate (electronics), lcsh:Technology, 7. Clean energy, 01 natural sciences, law.invention, lcsh:Chemistry, Graphene transistor, [SPI]Engineering Sciences [physics], Dirac pinch-off, law, 0103 physical sciences, contact gating, General Materials Science, 010306 general physics, lcsh:QH301-705.5, Instrumentation, Fluid Flow and Transfer Processes, [PHYS]Physics [physics], lcsh:T, Scattering, business.industry, Graphene, Oscillation, Process Chemistry and Technology, Velocity saturation, Transistor, General Engineering, 021001 nanoscience & nanotechnology, velocity saturation, lcsh:QC1-999, Computer Science Applications, high-frequency, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, Field-effect transistor, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:Physics
Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 &nbsp, GHz . We discuss the intrinsic 0.1 &nbsp, THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.

Full Text
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