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Magnetotransport properties of modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures were investigated by means of magnetoresistance measurements at low temperatures and high magnetic fields. Strong Shubnikov-de Haas oscillations with the double periodicity are observed. The mobility spectrum is obtained, which demonstrates that the mobilities of the two-dimensional electron gas (2DEG) in the two subbands in the triangular quantum well at heterointerface. It is found that the mobility of the 2DEG in the second subband is much higher than that in the first one. This is explained that interface roughness scattering and alloy disorder scattering have much stronger influence on transport properties of the 2DEG in the first subband than that in the second subband in Al[sub x]Ga[sub 1-x]N/GaN heterostructures. [ABSTRACT FROM AUTHOR]

Cyclotron resonance (CR) and magnetotransport experiments have been performed on modulation Si-doped Al[sub x]Ga[sub 1-x]N/GaN heterostructures with aluminum fraction x varying from 0.15 to 0.30. A clear CR absorption and Shubnikov–de Haas oscillations have been observed. The CR line shapes are analyzed by calculating the high frequency conductivity of a two-dimensional electron gas. The obtained electron effective mass m[sup *] and scattering time τ are found to depend on the aluminum fraction x. For x=0.30 the measured CR frequency shifts significantly upward, which demonstrates the formation of potential fluctuations in Al[sub x]Ga[sub 1-x]N/GaN heterostructures with large aluminum fraction x. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In[sub 0.02]Ga[sub 0.98]N/In[sub 0.16]Ga[sub 0.84]N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN quantum wells (QWs) with Al[sub 0.8]Ga[sub 0.2]N barriers, which were grown by atmospheric-pressure metal-organic chemical-vapor deposition. The thickness of the GaN QW layers was systematically varied from 1 to 4 ML. We clearly observed a PL peak at room temperature at a wavelength as short as 247 nm (5.03 eV) from 1-ML-thick QWs. The effective confinement energy, or difference between this recombination energy and the band gap of bulk GaN, is as large as 1.63 eV. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Influences of the thickness of the Si-doped n-type Al[sub 0.22]Ga[sub 0.78]N barrier and the thickness of the Al[sub 0.22]Ga[sub 0.78]N spacer on mobility and density of the two dimensional electron gas (2DEG) in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures were investigated. 2DEG mobilities of 1274 cm2/V s at 300 K and 4495 cm2/V s at 77 K were reached. Both 2DEG mobility and density decrease dramatically when the Al[sub 0.22]Ga[sub 0.78]N barrier becomes partially relaxed, indicating that transport properties of the 2DEG are influenced significantly by the piezoelectric polarization of the Al[sub 0.22]Ga[sub 0.78]N layer. From our results, the critical thickness of an Al[sub 0.22]Ga[sub 0.78]N layer on GaN is estimated to be between 65 and 75 nm, which is much higher than that predicted by theoretical calculation. This may be attributed to the interaction of misfit dislocations and the presence of a high density of extended defects in the Al[sub 0.22]Ga[sub 0.78]N layer. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) of modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al[sub 0.12]Ga[sub 0.88]N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Quarter-wave reflectors consisting of sets of GaN and Al[sub 0.34]Ga[sub 0.66]N layers have been grown on sapphire substrates by atmospheric-pressure metal organic chemical vapor deposition. A periodic structure with flat interfaces was observed by high-resolution scanning electron microscopy. X-ray diffraction measurements were performed to characterize the structures, from which the Al content x in the Al[sub x]Ga[sub 1-x]N layers was determined to be 0.34. No cracks could be seen on the surface of the reflectors by optical microscopy. The measured peak reflectivity at 390 nm increases with the number of pairs and reaches as high as 96±2% in the 35-pair reflector. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]