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Photoluminescence from sub-nanometer-thick GaN/Al[sub 0.8]Ga[sub 0.2]N quantum wells.
- Source :
-
Applied Physics Letters . 8/28/2000, Vol. 77 Issue 9. - Publication Year :
- 2000
-
Abstract
- Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN quantum wells (QWs) with Al[sub 0.8]Ga[sub 0.2]N barriers, which were grown by atmospheric-pressure metal-organic chemical-vapor deposition. The thickness of the GaN QW layers was systematically varied from 1 to 4 ML. We clearly observed a PL peak at room temperature at a wavelength as short as 247 nm (5.03 eV) from 1-ML-thick QWs. The effective confinement energy, or difference between this recombination energy and the band gap of bulk GaN, is as large as 1.63 eV. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*PHOTOLUMINESCENCE
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 77
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4415131
- Full Text :
- https://doi.org/10.1063/1.1290151