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Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta2O5-polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼10-2 cm2/V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage VDD=+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin ≥1.1 V at VDD=+15 V was measured with bias-stress effects included. [ABSTRACT FROM AUTHOR]

In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylmethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18 nm, significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75 cm2 V-1 s-1; the maximum on/off current ratio was near 5×106. [ABSTRACT FROM AUTHOR]