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Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions.
- Source :
- Applied Physics Letters; 6/8/2009, Vol. 94 Issue 23, p233307, 3p, 3 Graphs
- Publication Year :
- 2009
-
Abstract
- Complementary organic inverters were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate, bottom-contact organic thin-film transistors with Ta<subscript>2</subscript>O<subscript>5</subscript>-polymer bilayer dielectrics, inkjet-printed silver electrodes, and inkjet-printed organic semiconductors exhibit hole and electron mobilities as high as ∼10<superscript>-2</superscript> cm<superscript>2</superscript>/V s. Complementary inverters based on these transistors operate in ambient and exhibit a gain of -4.4 with supply voltage V<subscript>DD</subscript>=+20 V and -3 dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the inverters was evaluated for analog and digital operation, and a noise margin ≥1.1 V at V<subscript>DD</subscript>=+15 V was measured with bias-stress effects included. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 41573041
- Full Text :
- https://doi.org/10.1063/1.3153510