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ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2 (100)/Si(001) with ReSi2 [010]||Si<110>. The lattice matching consists of a common unit mesh of 120 Å2 area, and a mismatch of 1.8%. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. Although the lateral dimension of the twins is on the order of 100 Å, MeV He+ backscattering spectrometry revealed a minimum channeling yield of 2% for a ∼1500-Å-thick film grown at 650 °C. There is a very high degree of alignment between the ReSi2 (100) and the Si(001) planes. [ABSTRACT FROM AUTHOR]

Two groups of thin-film samples were grown on silicon wafer substrates of compositions spanning the entire range of the ternary disilicides: RexMo1-xSi2 and CrxV1-xSi2. In each case, the lattice parameters vary smoothly with composition. The optical and electrical properties of the films suggest that when molybdenum is added to semiconducting ReSi2 and when vanadium is added to semiconducting CrSi2, the forbidden energy gap in each case decreases smoothly to zero. [ABSTRACT FROM AUTHOR]

Examines method for production of Mg[sub 2]Si thin films through molecular beam epitaxy. Related studies on Mg[sub 2]Si heterostructures; Preparation procedure of Mg[sub 2]Si thin films; Description of x-ray diffraction pattern of thin films; Analysis of growth model for codeposited Mg[sub 2]Si films.

Studies the amorphization and recrystallization of epitaxial ReSi[sub 2] thin films grown on Si(100). Minimum channeling yield of the as-grown film; Damage in the film produced by ion implantation; Decrease in the resistivity of the film with dose.

Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature. [ABSTRACT FROM AUTHOR]