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Two pseudobinary semiconducting silicides: RexMo1-xSi2 and CrxV1-xSi2.
- Source :
-
Applied Physics Letters . 4/23/1990, Vol. 56 Issue 17, p1655. 3p. - Publication Year :
- 1990
-
Abstract
- Two groups of thin-film samples were grown on silicon wafer substrates of compositions spanning the entire range of the ternary disilicides: RexMo1-xSi2 and CrxV1-xSi2. In each case, the lattice parameters vary smoothly with composition. The optical and electrical properties of the films suggest that when molybdenum is added to semiconducting ReSi2 and when vanadium is added to semiconducting CrSi2, the forbidden energy gap in each case decreases smoothly to zero. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*SEMICONDUCTOR wafers
*SILICIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 56
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9833986
- Full Text :
- https://doi.org/10.1063/1.103132