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Your search keyword '"Kroemer H"' showing total 34 results
Start Over Author "Kroemer H" Journal applied physics letters
34 results on '"Kroemer H"'

1. Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices

Author

Samoska, L. A, Brar, Berinder, and Kroemer, H

Subjects
Solid-State Physics
Abstract

We report on long-wavelength intersubband absorption under normal incidence in heavily doped binary-binary GaSb-AlSb superlattices. Due to a small energy difference between the ellipsoidal L valleys in GaSb and the low-density-of-states Gamma minimum, electrons spill over from the first Gamma subband into the higher-energy L subband in GaSb wells, where they are allowed to make an intersubband transition under normally incident radiation. A peak fractional absorption per quantum well of 6.8 x 10 exp 3 (absorption coefficient alpha of about 8500/cm) is observed at about 15 microns wavelength for a sheet concentration of 1.6 x 10 exp 12 sq cm/well.

Published
1993
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25. E0+Δ0 transitions in GaSb/AlSb quantum wells.

Author

Forchel, A., Cebulla, U., Tränkle, G., Ziem, U., Kroemer, H., Subbanna, S., and Griffiths, G.

Subjects
CONDUCTION bands, QUANTUM wells
Abstract

We have observed optical transitions between the first subbands of the conduction band and the split-off valence band in GaSb/AlSb quantum well structures. The well width dependence of the emission energies is traced to quantization in the conduction band and in the split-off band. By comparison with data for the band-edge transitions the effective Δ0 gaps is the quantum wells are determined. Contrary to previous calculations the Δ0 gap energies are almost independent of the well width. [ABSTRACT FROM AUTHOR]

Published
1987
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26. Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification.

Author

Caine, E. J., Subbanna, S., Kroemer, H., Merz, J. L., and Cho, A. Y.

Subjects
HETEROJUNCTIONS, LUMINESCENCE, MOLECULAR beam epitaxy, DIODES, LATTICE theory
Abstract

We report experimental verification of the prediction of widely bias-tunable below-gap luminescence, from lattice-matched (p) (Al,In)As/ (n) InP heterojunctions, a system that has been predicted to have staggered lineup. The diodes, grown by molecular beam epitaxy, exhibit strong luminescence at 1.4 K, with a peak energy that shifts from 0.97 to 1.04 eV as the (pulsed) current density is increased from 4.5 to 40 A/cm2. Nonshifting injection luminescence at 1.4 eV, due to hole injection into the n-InP substrate, was also present, but appreciably weaker (<25%) than the interface luminescence. The spectra indicate that the band lineup in the (Al,In)As/InP system is indeed staggered, with a residual gap at the interface close to 0.96 eV. The corresponding conduction and valence-band offsets are 0.52 and 0.40 eV. [ABSTRACT FROM AUTHOR]

Published
1984
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