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Photocollection efficiency and interface charges of MBE‐grown abrupt p(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
- Source :
- Applied Physics Letters; October 1978, Vol. 33 Issue: 8 p749-751, 3p
- Publication Year :
- 1978
Details
- Language :
- English
- ISSN :
- 00036951 and 10773118
- Volume :
- 33
- Issue :
- 8
- Database :
- Supplemental Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Periodical
- Accession number :
- ejs41972274
- Full Text :
- https://doi.org/10.1063/1.90527