Search

The paper describes the design, fabrication, and characteristics of a novel infrared detector based on the principle of Golay's (1947) pneumatic infrared detector, which uses the expansion of a gas to detect infrared radiation. The present detector is constructed entirely from micromachined silicon and uses an electron tunneling displacement transducer for the detection of gas expansion. The sensitivity of the new detector is competitive with the best commercial pyroelectric sensors and can be readily improved by an order of magnitude through the use of an optimized transducer.

The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.

The extreme sensitivity of electron tunneling to variations in electrode separation has been used to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

A new tip for scanning tunneling microscopy and a tip repair procedure that allows one to reproducibly obtain atomic images of highly oriented pyrolytic graphite with previously inoperable tips are reported. The tips are shown to be relatively oxide-free and highly resistant to oxidation. The tips are fabricated with graphite by two distinct methods.

A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 100-1000 greater than that achieved in prior work. The previously used STM methods for superconductor spectroscopy are compared to those developed for the work reported here. Superconducting energy-gap spectra are reported for three superconductors, Pb, PbBi, and NbN, over a range of tunnel resistance. The measured spectra are compared directly to theory.