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Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation
- Source :
- Applied Physics Letters. 55
- Publication Year :
- 1989
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1989.
-
Abstract
- Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.
- Subjects :
- Solid-State Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 55
- Database :
- NASA Technical Reports
- Journal :
- Applied Physics Letters
- Publication Type :
- Report
- Accession number :
- edsnas.19890063824
- Document Type :
- Report
- Full Text :
- https://doi.org/10.1063/1.101778