Search

Your search keyword '"Institut National Polytechnique de Grenoble - INPG"' showing total 20 results
Start Over Author "Institut National Polytechnique de Grenoble - INPG" Journal applied physics letters
20 results on '"Institut National Polytechnique de Grenoble - INPG"'

1. The effect of Ta interface on the crystallization of amorphous phase change material thin films

Author

Giada Ghezzi, Nicolas Bernier, Françoise Hippert, C. Sabbione, M. Marra, Janina Ferrand, Sylvain Maitrejean, Pierre Noé, F. Fillot, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherches sur les Macromolécules Végétales (CERMAV), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Aracruz (Europe), Università degli Studi di Roma Tor Vergata [Roma], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Géomatériaux et Environnement (LGE), Université Paris-Est Marne-la-Vallée (UPEM), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Diffraction, Oxide minerals, Materials science, Physics and Astronomy (miscellaneous), Tantalum, chemistry.chemical_element, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Cladding (fiber optics), 01 natural sciences, law.invention, Amorphous solid, Crystallography, chemistry, law, 0103 physical sciences, X-ray crystallography, Crystallization, Thin film, Composite material, 0210 nano-technology
Abstract

International audience; The crystallization of amorphous GeTe and Ge2Sb2Te5 phase change material films, with thickness between 10 and 100 nm, sandwiched between either Ta or SiO2 layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100 nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO2 cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films. (C) 2014 AIP Publishing LLC.

Published
2014
Full Text
View/download PDF

2. Thermoelectric magnetic force acting on the solid during directional solidification under a static magnetic field

Author

G. Salloum Abou Jaoude, Henri Nguyen-Thi, Imants Kaldre, Yves Fautrelle, Zhongming Ren, J. Wang, Nathalie Mangelinck-Noël, Andris Bojarevics, L. Buligins, Yunbo Zhong, Xi Li, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), Dept. Mat. Sci. Engn. Shangaï, SHANGAI UNIVERSITY, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Latvian State University, Fac Math & Phys, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Magnetostatics, 01 natural sciences, Synchrotron, law.invention, Magnetic field, law, 0103 physical sciences, Thermoelectric effect, Particle, Current (fluid), 0210 nano-technology, Velocity measurement, Directional solidification
Abstract

International audience; Thermoelectric magnetic force (TEMF), which is induced by the interaction between the thermoelectric current and the applied magnetic field, acting on the solid during directional solidification under a static magnetic field was derived. Equipping the derived equation, an analytical calculation of the velocity of a solid spherical particle submitted to the TEMF was carried out. The experiment with corresponding phenomenon was performed and recorded by the in situ synchrotron X-ray imaging, which permitted a direct measurement of the velocity of the TEMF-driven motion of detached fragments. The measurement of the velocities showed a reasonable agreement with the calculation results.

Published
2012
Full Text
View/download PDF

3. High-Qsilica microcavities on a chip: From microtoroid to microsphere

Author

Jean-Baptiste Jager, Emmanuel Hadji, E. Delamadeleine, Pierre Noé, V. Calvo, T. Ricart, Alain Morand, Davide Bucci, Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Service de Physique des Matériaux et Microstructures ( SP2M - UMR 9002 ), Institut Nanosciences et Cryogénie ( INAC ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes ( UGA ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes ( UGA ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes ( UGA ), Laboratoire Silicium Nanoélectronique Photonique et Structures ( SINAPS ), PHotonique, ELectronique et Ingénierie QuantiqueS ( PHELIQS ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes ( UGA ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes ( UGA ) -Institut Nanosciences et Cryogénie ( INAC ), Groupe d'étude des semiconducteurs ( GES ), Centre National de la Recherche Scientifique ( CNRS ) -Université Montpellier 2 - Sciences et Techniques ( UM2 ), Département des Technologies Silicium ( DTSI ), Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Université Grenoble Alpes [Saint Martin d'Hères]-Direction de Recherche Technologique (CEA) ( DRT (CEA) ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Université Grenoble Alpes [Saint Martin d'Hères]-Direction de Recherche Technologique (CEA) ( DRT (CEA) ), Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation ( IMEP-LAHC ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Institut National Polytechnique de Grenoble ( INPG ) -Université Savoie Mont Blanc ( USMB [Université de Savoie] [Université de Chambéry] ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Microsphere, 010309 optics, 0103 physical sciences, Radiative transfer, Silica microsphere, Wafer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, business.industry, Pillar, 021001 nanoscience & nanotechnology, Chip, chemistry, Q factor, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business
Abstract

We report on the realization of high-quality silica optical microcavities on a chip. We show that a precise control of radii of both silica disk and silicon pillar defines the shape of molten microresonators from microtoroids to microspheres. These last ones advantageously combine small mode volumes in structures of very small radii (5

Published
2011
Full Text
View/download PDF

4. Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

Author

A. Das, Eirini Sarigiannidou, P. K. Kandaswamy, Eva Monroy, S. Sakr, Laetitia Rapenne, H. Machhadani, Y. Kotsar, F. H. Julien, Maria Tchernycheva, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Photoluminescence, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, Superlattice, Doping, Wide-bandgap semiconductor, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Blueshift, Electric field, 0103 physical sciences, Optoelectronics, 0210 nano-technology, Absorption (electromagnetic radiation), business, Luminescence
Abstract

International audience; We report on the effect of Si doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices. For increasing doping levels, interband luminescence displays a blueshift and a broadening of the band edge caused by the screening of the internal electric field and band-filling effects. The intersubband absorption energy is mainly governed by many-body effects like exchange interaction and depolarization shift, which increase the e(1)-e(2) subband separation. The ISB blueshift induced by many-body effects can be more than 50% of the e(1)-e(2) transition energy.

Published
2010
Full Text
View/download PDF

5. Origin of the spatial resolution in atom probe microscopy

Author

Frédéric De Geuser, Daniel Haley, Baptiste Gault, Simon P. Ringer, Michael P. Moody, Leigh T. Stephenson, Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics and Astronomy (miscellaneous), business.industry, Chemistry, Resolution (electron density), Nanotechnology, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Atom probe, Lateral resolution, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Scanning probe microscopy, Optics, law, 0103 physical sciences, Microscopy, 0210 nano-technology, business, Image resolution, ComputingMilieux_MISCELLANEOUS
Abstract

Atom-probe microscopy offers unprecedented insights on the subnanometer structure and chemistry of materials in three dimensions. The actual spatial resolution achievable is however still an uncertain parameter, as no comprehensive study has been undertaken to unveil the physics underpinning how key parameters impact the performance. Here, we present a comprehensive investigation of the in-depth and lateral resolution of the technique. We discuss methods to estimate the resolution and show a resolution better than 20 pm in-depth. Models to support our results were developed and are discussed in the present letter. © 2009 American Institute of Physics.

Published
2009
Full Text
View/download PDF

6. Direct silicon bonding dynamics: A coupled fluid/structure analysis

Author

Jean-Pierre Raskin, Alexandre Barthelemy, Etienne Navarro, Rene Moreau, Yves Bréchet, Iuliana Radu, Thomas Pardoen, SOITEC Bernin, France, SOITEC, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institute of Mechanics, Materials and Civil Engineering [Louvain] (IMMC), Université Catholique de Louvain = Catholic University of Louvain (UCL), and Université Catholique de Louvain, Inst. Informat. & Commun Technol Elect

Subjects
Materials science, Physics and Astronomy (miscellaneous), Adhesive bonding, Wafer bonding, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Direct bonding, Thermocompression bonding, Mechanics, 021001 nanoscience & nanotechnology, 01 natural sciences, Reynolds equation, Anodic bonding, 0103 physical sciences, Wafer, Boundary value problem, 010306 general physics, 0210 nano-technology
Abstract

International audience; During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence. (C) 2013 AIP Publishing LLC

Published
2013
Full Text
View/download PDF

7. Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Author

Jong Heun Lee, Junghwan Huh, Gyu-Tae Kim, Mireille Mouis, Doyoung Jang, Gerard Ghibaudo, So Jeong Park, Dae-Young Jeon, Min-Kyu Joo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Electron mobility, Materials science, Physics and Astronomy (miscellaneous), Passivation, business.industry, Infrasound, Nanowire, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, Noise (electronics), 0103 physical sciences, Optoelectronics, Field-effect transistor, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

Channel access resistance (Rsd) effects on the charge carrier mobility (μ) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without Rsd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (Cgc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided Rsd influence is included.

Published
2013
Full Text
View/download PDF

8. Synchrotron x-ray nano-tomography characterization of the sintering of multilayered systems

Author

Chulseung Lee, Olivier Guillon, Zilin Yan, Steve Wang, Christophe L. Martin, Didier Bouvard, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Argonne National Laboratory [Lemont] (ANL), Samsung Advanced Institute of Technology (SAIT), and Samsung

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Metallurgy, Sintering, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, Synchrotron, law.invention, Capacitor, law, 0103 physical sciences, Nano, Composite material, 0210 nano-technology, Ceramic capacitor, Shrinkage
Abstract

International audience; Synchrotron x-ray nano-tomography was used to characterize the microstructures of multi-layer ceramic capacitors before and after sintering. 3D microstructures of the same sample were reconstructed and quantitatively analyzed. The discontinuities observed in inner electrodes were found to originate from initial heterogeneities of nickel powders in the electrodes. They are supposed to grow due to the constraint of adjacent dielectric layers. Dielectric layers show anisotropic shrinkage with a decrease in density as function of layer position in the multilayer.

Published
2012
Full Text
View/download PDF

9. Etching suspended superconducting tunnel junctions from a multilayer

Author

Clemens Winkelmann, Laetitia Pascal, Hervé Courtois, Olivier Buisson, B. Gilles, Hung Q. Nguyen, Z. H. Peng, Nano-Electronique Quantique et Spectroscopie (NEEL - QuNES), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Circuits électroniques quantiques Alpes (NEEL - QuantECA), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 228464,EC:FP7:INFRA,FP7-INFRASTRUCTURES-2008-1,MICROKELVIN(2009), Nano-Electronique Quantique et Spectroscopie (QuNES), and Circuits électroniques quantiques Alpes (QuantECA)

Subjects
Josephson effect, Fabrication, Materials science, Physics and Astronomy (miscellaneous), FOS: Physical sciences, Physics::Optics, Nanotechnology, 02 engineering and technology, 01 natural sciences, law.invention, Superconductivity (cond-mat.supr-con), law, Etching (microfabrication), Condensed Matter::Superconductivity, parasitic diseases, 0103 physical sciences, Thermal, 010306 general physics, Superconductivity, business.industry, Condensed Matter - Superconductivity, technology, industry, and agriculture, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Computer Science::Other, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Optoelectronics, Superconducting tunnel junction, Photolithography, 0210 nano-technology, business, Voltage
Abstract

A method to fabricate large-area superconducting hybrid tunnel junctions with a suspended central normal metal part is presented. The samples are fabricated by combining photo-lithography and chemical etch of a superconductor—insulator—normal metal multilayer. The process involves few fabrication steps, is reliable and produces extremely high-quality tunnel junctions. Under an appropriate voltage bias, a significant electronic cooling is demonstrated. We analyze semi-quantitatively the thermal behavior of a typical device.

Published
2012
Full Text
View/download PDF

10. Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Author

Thierry Ouisse, Alexei Zakharov, Ulrich Starke, Camilla Coletti, Didier Chaussende, Konstantin V. Emtsev, Laboratoire des matériaux et du génie physique (LMGP ), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Hydrogen, Physics and Astronomy (miscellaneous), Photoemission spectroscopy, Intercalation (chemistry), chemistry.chemical_element, FOS: Physical sciences, Nanotechnology, Angle-resolved photoemission spectroscopy, 02 engineering and technology, Substrate (electronics), 01 natural sciences, law.invention, X-ray photoelectron spectroscopy, law, 0103 physical sciences, Monolayer, General Materials Science, 010306 general physics, 010302 applied physics, Condensed Matter - Materials Science, Low-energy electron diffraction, Graphene, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), [CHIM.MATE]Chemical Sciences/Material chemistry, Condensed Matter Physics, 021001 nanoscience & nanotechnology, Low-energy electron microscopy, chemistry, Mechanics of Materials, Chemical physics, 0210 nano-technology, Layer (electronics), Carbon
Abstract

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers., 4 pages, 3 figures, Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

Published
2011
Full Text
View/download PDF

11. Physical origin of the incubation time of self-induced GaN nanowires

Author

Lutz Geelhaar, Achim Trampert, Vincent Consonni, Henning Riechert, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Paul-Drude-Institut für Festkörperelektronik (PDI)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Nanowire, Nucleation, chemistry.chemical_element, Crystal growth, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystallography, Semiconductor, Reflection (mathematics), chemistry, Electron diffraction, Chemical physics, 0103 physical sciences, Gallium, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

International audience; The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy has been investigated by reflection high-energy electron diffraction measurements. It is found that stable nuclei in the form of spherical cap-shaped islands develop only after an incubation time that is strongly dependent upon the growth conditions. Its evolution with the growth temperature and gallium rate has been described within standard island nucleation theory, revealing a nucleation energy of 4.9 +/- 0.1 eV and a very small nucleus critical size. The consideration of the incubation time is critical for the control of the nanowire morphology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610964]

Published
2011
Full Text
View/download PDF

12. Phonon Raman scattering of perovskite LaNiO3 thin films

Author

N. Chaban, S. Pignard, M. Weber, Jens Kreisel, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherche Claude Delorme [Jouy-en-Josas] (CRCD), and Air Liquide [Siège Social]

Subjects
Condensed Matter - Materials Science, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Phonon, Scattering, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Heterojunction, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Condensed Matter::Materials Science, symbols.namesake, Distortion, 0103 physical sciences, symbols, Condensed Matter::Strongly Correlated Electrons, Thin film, 010306 general physics, 0210 nano-technology, Raman spectroscopy, Raman scattering, Perovskite (structure)
Abstract

International audience; We report an investigation of perovskite-type LaNiO3 thin films by Raman scattering in both various scattering configurations and as a function of temperature. The room-temperature Raman spectra and the associated phonon mode assignment provide reference data for phonon calculations and for the use of Raman scattering for structural investigations of LaNiO3, namely, the effect of strain in thin films or heterostructures. The temperature-dependent Raman spectra from 80 to 900 K are characterized by the softening of the rotational A(1g) mode, which suggests a decreasing rhombohedral distortion toward the ideal cubic structure with increasing temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464958]

Published
2010
Full Text
View/download PDF

13. Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Author

Gerard Ghibaudo, Yong Xu, J. A. Chroboczek, Romain Gwoziecki, Takeo Minari, Romain Coppard, Kazuhito Tsukagoshi, Francis Balestra, Domenget, Chahla, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Normalization (statistics), Materials science, Physics and Astronomy (miscellaneous), [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Infrasound, Analytical chemistry, 02 engineering and technology, 01 natural sciences, law.invention, [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], law, 0103 physical sciences, Flicker noise, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Contact resistance, Transistor, Spectral density, 021001 nanoscience & nanotechnology, Gate voltage, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Optoelectronics, Field-effect transistor, 0210 nano-technology, business
Abstract

The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10−7–10−6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.

Published
2010
Full Text
View/download PDF

14. Excitation and focusing of terahertz surface plasmons using a grating coupler with elliptically curved grooves

Author

Jean-Louis Coutaz, Alexander P. Shkurinov, D. Armand, Maxim Nazarov, Gwenaël Gaborit, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Michelin, Isabelle, and Domenget, Chahla

Subjects
[PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Diffraction, Materials science, Physics and Astronomy (miscellaneous), Terahertz radiation, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Physics::Optics, 02 engineering and technology, Substrate (electronics), Grating, Engraving, 01 natural sciences, 010309 optics, Optics, [PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], 0103 physical sciences, Physics::Atomic and Molecular Clusters, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Diffraction grating, ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Surface plasmon, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], visual_art, visual_art.visual_art_medium, Optoelectronics, 0210 nano-technology, business, Excitation
Abstract

Using a diffraction grating with elliptically curved grooves engraved at the top of an aluminum slab, surface plasmons in the terahertz frequency range are efficiently excited with an incoming parallel beam and focused over the metal surface down to the diffraction limit. At 0.5 THz, the lateral confinement of the surface plasmon is 1 mm while its extension in air is 0.74 mm, much smaller than the calculated value for a semi-infinite substrate having the conductivity of bulk aluminum.

Published
2009
Full Text
View/download PDF

15. Atomic structure of Zr–Cu glassy alloys and detection of deviations from ideal solution behavior with Al addition by x-ray diffraction using synchrotron light in transmission

Author

Gavin Vaughan, Mihai Stoica, Akihisa Inoue, A.R. Yavari, A. LeMoulec, M. Satta, Konstantinos Georgarakis, Yan Li, J. Antonowicz, Dmitri V. Louzguine-Luzgin, Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University [Sendai], Fac Phys - Univ Technol Warsaw, Univ. Technol. Warsaw, Institute of Complex Materials [Dresden], Leibniz Institute for Solid State and Materials Research (IFW Dresden), Leibniz Association-Leibniz Association, and European Synchrotron Radiation Facility (ESRF)

Subjects
010302 applied physics, Diffraction, Amorphous metal, Materials science, Quantitative Biology::Neurons and Cognition, Physics and Astronomy (miscellaneous), Zirconium alloy, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Ideal solution, 021001 nanoscience & nanotechnology, Space (mathematics), 01 natural sciences, Molecular physics, Synchrotron, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, Crystallography, Distribution function, law, 0103 physical sciences, X-ray crystallography, 0210 nano-technology
Abstract

International audience; The atomic structure of Zr-Cu binary amorphous alloys was studied using real space pair distribution functions derived from x-ray diffraction. The structure can be modeled by an ideal solution approximation because of relatively weak Cu-Zr atomic interactions. Addition of Al to Zr-Cu metallic glasses modifies the atomic structure in the short and medium range order because of the strongly attractive interaction between Al and Zr atoms. These interactions generate strong deviations from the ideal solution behavior.

Published
2009
Full Text
View/download PDF

16. Left handed dispersion of a stack of subwavelength hole metal arrays at terahertz frequencies

Author

Jean-Louis Coutaz, Didier Lippens, Frédéric Garet, Eric Lheurette, Charles Croënne, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Physics and Astronomy (miscellaneous), business.industry, Terahertz radiation, Impedance matching, Metamaterial, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Terahertz spectroscopy and technology, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry.chemical_compound, Optics, chemistry, Stack (abstract data type), Benzocyclobutene, 0103 physical sciences, Dispersion (optics), Optoelectronics, 010306 general physics, 0210 nano-technology, business, Refractive index, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; We report on the electromagnetic response of a stack of subwavelength hole metal arrays. The samples were designed for exhibiting left handed dispersion branches under normal incidence, and their transmissivities were optimized via the fabrication of elliptical-shaped holes. They are constituted of benzocyclobutene layers with tens of micron thicknesses and submicron-thick gold films patterned by photolithography. Experimental evidence, achieved by time-domain terahertz spectroscopy and supported by full wave simulations, of a ground left handed dispersion branch is found around 0.45 THz. The insertion losses are −3 dB for a five-layer structure, this good level being explained by the matching of the impedance.

Published
2009
Full Text
View/download PDF

17. On the dynamic fragmentation of laser shock-melted tin

Author

Michel Boustie, T. de Rességuier, A. Dragon, L. Signor, Laurent Berthe, Laboratoire de combustion et de détonique (LCD), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Laboratoire pour l'application des lasers de puissance (LALP), Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), chemistry.chemical_element, 02 engineering and technology, Mechanics, Shadowgraphy, 021001 nanoscience & nanotechnology, Spall, Laser, 01 natural sciences, law.invention, Transverse plane, chemistry, Fragmentation (mass spectrometry), law, 0103 physical sciences, Shock physics, 0210 nano-technology, Tin, ComputingMilieux_MISCELLANEOUS
Abstract

Dynamic fragmentation in liquid metals is an issue of increasing interest in shock physics, both for basic and applied scientific motivations. In a recent paper, we have reported an exploratory study of liquid spall in tin samples melted upon laser-driven shocks. The need for further experiments and analyses to answer some questions raised by that work had been pointed out. Thus, we present here some complementary results, including specific recovery tests as well as high speed transverse shadowgraphy to visualize both the expanding cloud of fast droplets and the late motion of large fragments that had been inferred from postshock observations.

Published
2008
Full Text
View/download PDF

18. Tensile deformation accommodation in microscopic metallic glasses via subnanocluster reconstructions

Author

A.R. Yavari, A. Ibenskas, G.A. Evangelakis, Ch.E. Lekka, Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Icosahedral symmetry, molecular-dynamics, 02 engineering and technology, shear, 01 natural sciences, state, Dodecahedron, solids, 0103 physical sciences, Ultimate tensile strength, Cluster (physics), [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, order, nanoparticle dispersions, ComputingMilieux_MISCELLANEOUS, homogeneous flow, 010302 applied physics, volume, model, Amorphous metal, Condensed matter physics, Drop (liquid), Metallurgy, Quasicrystal, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, plasticity, Deformation (engineering), 0210 nano-technology
Abstract

We present results on the structure and the atomistic mechanisms for tensile deformation accommodation of the Cu46Zr54 microscopic metallic glass. At equilibrium, 23% of the atoms belong to tiny Cu-centered icosahedral clusters (Cu-ICO) and approximately 41% Zr centered slightly larger ICO-like clusters. Under deformation, the number of Cu-ICOs remains dynamically constant until yielding through a continuous cluster destruction-recreation process. Plastic deformation occurs homogeneously and is locally accommodated through the formation of rhombic dodecahedral clusters with significant (similar to 2%) atomic density drop. These findings explain very recent experimental results demonstrating the fundamental differences of plastic deformation mechanisms between bulk metallic and microscopic glasses. (C) 2007 American Institute of Physics. Applied Physics Letters

Published
2007
Full Text
View/download PDF

19. Optical characterization of a strained silicon quantum well on SiGe on insulator

Author

Georges Bremond, J. Munguía, Olivier Marty, Michel Mermoux, Jean-Marie Bluet, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), and Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), Silicon, business.industry, Band gap, chemistry.chemical_element, Strained silicon, Insulator (electricity), [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, symbols.namesake, chemistry, 0103 physical sciences, symbols, Optoelectronics, 0210 nano-technology, business, Raman spectroscopy, Luminescence, Quantum well
Abstract

International audience; An 8 nm thick strained silicon layer embedded in relaxed Si0.8Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at Γ point of 0.19 eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016 eV.

Published
2007
Full Text
View/download PDF

20. Transmission measurement at 10.6μm of Te2As3Se5 rib waveguides on As2S3 substrate

Author

Jean-Emmanuel Broquin, E. Bonhomme, Pierre Kern, C. Vigreux-Bercovici, Annie Pradel, L. Labadie, Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Astrophysique de Grenoble (LAOG), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Physics and Astronomy (miscellaneous), Chalcogenide, FOS: Physical sciences, Polishing, 02 engineering and technology, Substrate (electronics), Rib waveguides, 01 natural sciences, 010309 optics, chemistry.chemical_compound, Vacuum deposition, Etching (microfabrication), 0103 physical sciences, ComputingMilieux_MISCELLANEOUS, Thermal infrared, business.industry, 021001 nanoscience & nanotechnology, Transmission (telecommunications), chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Optics (physics.optics), Physics - Optics
Abstract

The feasibility of chalcogenide rib waveguides working at lambda = 10.6 microns has been demonstrated. The waveguides comprised a several microns thick Te2As3Se5 film deposited by thermal evaporation on a polished As2S3 glass substrate and further etched by physical etching in Ar or CF4/O2 atmosphere. Output images at 10.6 microns and some propagation losses roughly estimated at 10dB/cm proved that the obtained structures behaved as channel waveguides with a good lateral confinement of the light. The work opens the doors to the realisation of components able to work in the mid and thermal infrared up to 20 microns and even more., The following article appeared in Vigreux-Bercovici et al., Appl. Phys. Lett. 90, 011110 (2007) and may be found at http://link.aip.org/link/?apl/90/011110

Published
2007
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results