30 results on '"Hobart, Karl D."'
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2. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
3. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
4. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
5. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
6. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
7. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
8. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
9. Structural transition and recovery of Ge implanted β-Ga2O3
10. Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
11. Integration of polycrystalline Ga2O3 on diamond for thermal management
12. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
13. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3
14. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
15. Erratum: “Thermal conduction inhomogeneity of nanocrystalline diamond films by dual-side thermoreflectance” [Appl. Phys. Lett. 102, 111907 (2013)]
16. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3.
17. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
18. Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
19. On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC
20. Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes
21. Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC
22. Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing
23. Degradation mechanisms of 2MeV proton irradiated AlGaN/GaN HEMTs.
24. Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes
25. Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas
26. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
27. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
28. Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes.
29. Room temperature operation of epitaxially grown Si/Si[sub 0.5]Ge[sub 0.5]/Si resonant interband tunneling diodes.
30. Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3.
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