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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
- Source :
- Applied Physics Letters; 11/5/2018, Vol. 113 Issue 19, pN.PAG-N.PAG, 5p, 5 Graphs
- Publication Year :
- 2018
-
Abstract
- Semi-insulating halide vapor phase epitaxial β-Ga<subscript>2</subscript>O<subscript>3</subscript> films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. Room temperature capacitance-voltage measurements at 1 MHz showed evidence of an ultra-low free carrier concentration n-type film with a free carrier concentration near flatband (V<subscript>FB</subscript> ∼ 4.4 V) estimated to be <10<superscript>14</superscript> cm<superscript>−3</superscript>, resulting in a high breakdown voltage of 2380 V (3.18 MV/cm) measured on a lateral diode without field termination. Secondary ion mass spectroscopy did not reveal Fe compensating species; however, an average Si concentration of about 5 × 10<superscript>15</superscript> cm<superscript>−3</superscript> and an N concentration of about 2 × 10<superscript>17</superscript> cm<superscript>−3</superscript> were detected, suggesting that N acceptors compensated Si donors to result in a nearly intrinsic β-Ga<subscript>2</subscript>O<subscript>3</subscript> film. Photoionization spectroscopy suggested the presence of a deep acceptor-like level located at E<subscript>c</subscript> −0.23 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 132939960
- Full Text :
- https://doi.org/10.1063/1.5045601