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Start Over Author "Heera, V." Journal applied physics letters
12 results on '"Heera, V."'

2. On-chip superconductivity via gallium overdoping of silicon

Author

Skrotzki, R., primary, Fiedler, J., additional, Herrmannsdörfer, T., additional, Heera, V., additional, Voelskow, M., additional, Mücklich, A., additional, Schmidt, B., additional, Skorupa, W., additional, Gobsch, G., additional, Helm, M., additional, and Wosnitza, J., additional

Published
2010
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11. Diamond formation in cubic silicon carbide.

Author

Pécz, B., Weishart, H., Heera, V., and Tóth, L.

Subjects
SILICON carbide, ION implantation, DIAMONDS, NUCLEATION
Abstract

High-dose carbon implantation (3 × 10[sup 17] and 1 × 10[sup 18] ions/cm²) into cubic SiC on Si was carried out at elevated temperatures (600 to 1200°C) and different dose rates (1×10[sup 13] to 1.5 × 10[sup 14] cm[sup -2] s[sup -1]). Transmission electron microscopy revealed the formation of either graphite or diamond precipitates, depending on the implantation parameters. In all cases, the diamond grains were epitaxial to the SiC lattice, while the graphite was textured. The minimum temperature for diamond formation was 900 °C, while graphite formed at 600 °C. The synthesized phase depends as well on the dose rate; graphite was formed at 900 °C with a high dose rate. Obviously, a critical temperature for diamond formation exists and increases with increasing dose rate. This behavior is explained by the competition between the accumulation and dynamic annealing of radiation defects in the SiC lattice, which acts as a template for diamond nucleation. Diamond grains with diameters as large as 10 nm have been observed after implantation at 1200 °C. [ABSTRACT FROM AUTHOR]

Published
2003

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