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Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al[sup +] implantation.
- Source :
- Applied Physics Letters; 5/3/1999, Vol. 74 Issue 18, p2602, 3p, 4 Black and White Photographs
- Publication Year :
- 1999
-
Abstract
- Examines the aluminum carbide formation in silicon carbide (SiC) with high dose of aluminum ion implantation. Properties of SiC for electronic and mechanical applications; Similarities in the aluminum carbide precipitates with the silicon carbide matrix.
- Subjects :
- ALUMINUM
SILICON carbide
ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 74
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 4257865
- Full Text :
- https://doi.org/10.1063/1.123910