269 results on '"Hao Yue"'
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2. Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling
3. Low turn-on voltage and 2.3 kVβ -Ga2O3 heterojunction barrier Schottky diodes with Mo anode
4. An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing
5. The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer.
6. Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2.
7. Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices.
8. Quasi-2D high mobility channel E-mode β-Ga2O3 MOSFET with Johnson FOM of 7.56 THz·V.
9. Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode
10. High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure
11. Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures
12. Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium
13. Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121, 172102 (2022)]
14. On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes.
15. Low turn-on voltage and 2.3 kV β-Ga2O3 heterojunction barrier Schottky diodes with Mo anode.
16. Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs.
17. An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing.
18. Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor
19. Effect of gamma irradiation onβ -Ga2O3 vertical Schottky barrier diode
20. Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity
21. Demonstration of the normally offβ -Ga2O3 MOSFET with high threshold voltage and high current density
22. Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization
23. Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation
24. High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure.
25. Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode.
26. Study on the single-event burnout mechanism of GaN MMIC power amplifiers.
27. Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates.
28. Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium.
29. Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures
30. Tunable d0 magnetism of hexagonal boron nitride introduced through an adjacent doping strategy
31. Deep reservoir computing based on self-rectifying memristor synapse for time series prediction
32. Transient form of polyvinyl alcohol-based devices with configurable resistive switching behavior for security neuromorphic computing
33. Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment
34. Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor
35. Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon
36. High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
37. Effect of gamma irradiation on β-Ga2O3 vertical Schottky barrier diode.
38. Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density.
39. Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation.
40. Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress
41. Tunable d0 magnetism of hexagonal boron nitride introduced through an adjacent doping strategy.
42. Synergistic effect of covalent functionalization and intrinsic electric field on β-Ga2O3/graphene heterostructures
43. Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring
44. Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure
45. Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure
46. A high-performance quasi-vertical MoSe2 photodiode with ultra-low dark current
47. Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications
48. A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation.
49. Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment.
50. Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor.
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