Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment.

This Letter reports two kinds of oxygen-containing plasma treated β-Ga₂O₃ Schottky barrier diodes (SBDs), including N₂O plasma treatment and O₂ plasma treatment, and the SBD without plasma is prepared for comparison. I–V characteristics, breakdown characteristics, and trap state characteristics of three devices have been studied. It is found that the turn-on voltage of SBDs with N₂O plasma can reduce to 0.6 V, and the better current density of 750 A/cm² and an on-resistance of 3.5 mΩ cm² are obtained after the N₂O plasma treatment. Moreover, the breakdown voltage of SBDs with N₂O plasma is 50.2% higher than the conventional one, whose value reaches 323 V. In addition, the trap states' characteristics of the devices are studied, which show that the oxygen-containing plasma can reduce the deep level trap states density partly in the anode region, which can improve the surface quality effectively. [ABSTRACT FROM AUTHOR]