31 results on '"Chen, C. Q."'
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2. High efficiency and broadband acoustic diodes
3. A coupled analysis of the piezoresponse force microscopy signals
4. Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
5. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
6. Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field
7. Dynamic smoothing of nanocomposite films
8. Tunable self-organization of nanocomposite multilayers
9. On the dynamic roughening transition in nanocomposite film growth
10. Nanoscale deformation in TiC∕a-C multilayered nanocomposite coatings
11. Bending strength and flexibility of ZnO nanowires
12. Luminescence from stacking faults in gallium nitride
13. Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth
14. Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics
15. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
16. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
17. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
18. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
19. AlGaN layers grown on GaN using strain-relief interlayers
20. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
21. Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells
22. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates
23. Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
24. Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials
25. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
26. Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on [formula] semipolar GaN.
27. Below band gap photoreflectance transitions in epitaxial GaN.
28. Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics.
29. Air-bridged lateral growth of crack-free Al[sub 0.24]Ga[sub 0.76]N on highly relaxed porous GaN.
30. Pulsed atomic-layer epitaxy of ultrahigh-quality Al[sub x]Ga[sub 1-x]N structures for deep ultraviolet emissions below 230 nm.
31. Luminescence mechanisms in quaternary Al[sub x]In[sub y]Ga[sub 1-x-y]N materials.
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