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High output power (700 mW) in a nearly diffraction-limited (0.7°) single-lobed nonsteering output beam is obtained from a gain-guided diode laser array in a novel, easily fabricated external cavity configuration. The laser output beam is collimated in both lateral and vertical directions. Differential quantum efficiency as high as 70% has been measured along with excellent linearity of the optical power versus current characteristic. The power and efficiency are the highest reported for a coupled-stripe laser array emitting a narrow single-lobed beam. [ABSTRACT FROM AUTHOR]

Coupled laser arrays emit far-field radiation which is not well described by the grating-like formulation. An exact diffraction theory solution for the far field of coupled laser arrays is derived. The model is used to obtain excellent fit with the far-field pattern of a twin coupled laser diode operated under pulse modulation and with that of a hybrid coupled diode laser device. The fitted results exhibit the existence of a small phase difference between the coupled stripes and this difference is increased up to 12° in the hybrid device. [ABSTRACT FROM AUTHOR]

In order to investigate the possibility to force an array of coupled lasers to emit a single longitudinal mode under current pulse modulation, a new hybrid device was constructed from two twin coupled-stripe lasers with external mirrors. A single narrow longitudinal mode has been obtained from the two coupled lasers. The spectrum was stabilized to less than 0.15 Å through a wide range of current pulse amplitudes. [ABSTRACT FROM AUTHOR]

A monolithic integration of AlGaAs/GaAs Be-implanted laser and external mirrors was demonstrated. The mirrors of the laser and the external mirrors were produced using a microcleaving facets process. Results emphasize stabilization of the longitudinal mode spectrum by the external cavity action. [ABSTRACT FROM AUTHOR]

A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400 °C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]