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Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors.
- Source :
-
Applied Physics Letters . 11/11/1996, Vol. 69 Issue 20, p3031. 3p. 7 Graphs. - Publication Year :
- 1996
-
Abstract
- A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400 °C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTORS
*REFLECTANCE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 69
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6289596
- Full Text :
- https://doi.org/10.1063/1.116829