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We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO2 interface.

Epitaxial strain can play an important role in controlling the local phase dynamics of transition metal oxides. With scattering-type scanning near-field optical microscopy, we visualize the three dimensional landscape of phase inhomogeneity in strained VO2 films grown on [100]R TiO2 substrates. We demonstrate that three different symmetries are spontaneously broken in the vicinity of the VO2 phase transition: (1) Monoclinic-tetragonal (rutile) crystal symmetry breaking due to the structural phase transition, (2) in-plane (x-y plane) rotational symmetry breaking due to the formation of periodic strain domains, and (3) out-of-plane (z-axis) mirror symmetry breaking at the film cross-section due to substrate-induced epitaxial strain.