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Voltage switching of a VO2 memory metasurface using ionic gel

Authors :
Nan Marie Jokerst
Kun Geng
Bong-Jun Kim
H. T. Stinson
Dimitri Basov
A. J. Sternbach
B. C. Chapler
Mengkun Liu
Alexander McLeod
Matthew Royal
Richard D. Averitt
Michael Goldflam
David R. Smith
Hyun-Tak Kim
Jingdi Zhang
Source :
Applied Physics Letters. 105:041117
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO2 interface.

Details

ISSN :
10773118 and 00036951
Volume :
105
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........7df44f5ed288495aee4daf748451b23c
Full Text :
https://doi.org/10.1063/1.4891765