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This investigation presents a simple approach to realize the low temperature crystallization of Pb0.4Sr0.6TiO3 thin films at 400 °C by taking advantage of well controlled lead excess and kinetic-driving-force compensated thermodynamics crystalline via sputtering deposition. The thin films prepared at low temperature show fine-grained micro-structure because of the suppressed grain growth, furthermore, the intrinsic dielectric response can be modulated by the distinct level of crystallinity. The film processed at 450 °C exhibited a dielectric constant of 435 and high figure merit of 130 at 400 kV/cm, superior ferroelectric property, and stable performance with temperature and frequency. [ABSTRACT FROM AUTHOR]

Polarization switching and energy storage properties of highly (100) oriented antiferroelectric (AFE) (Pb,La)(Zr,Ti)O3 thin films (≤250 nm) deposited via a sol-gel process with both LaNiO3 and Pt top electrodes were investigated. By using LaNiO3 top electrodes, the energy density as well as energy efficiency can be enhanced by 4.6 J/cm3 and 11%, respectively. Furthermore, the films with LaNiO3 top electrodes are more capable of providing high energy density over a wide temperature regime above room temperature compared to Pt. This work clearly highlights that oxide top electrodes can greatly improve the energy storage performance of antiferroelectric thin film capacitors. [ABSTRACT FROM AUTHOR]

Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 (PST/LSMO) thin film has been deposited on Si substrate by chemical solution deposition. Obvious changes in dielectric constant and loss as functions of frequency and magnetic field were observed in PST/LSMO thin film. By applying both dc bias electric and magnetic fields, apparent dielectric anomalies were observed in the 'butterfly-hysteresis' curves. These effects may be useful for practical application. The mechanism for the magnetocapacitance effects in PST/LSMO is rationalized by combining the Maxwell-Wagner capacitor model and the magnetoresistivity and magnetostriction of the LSMO. [ABSTRACT FROM AUTHOR]

The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations. [ABSTRACT FROM AUTHOR]