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Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations.
- Source :
- Applied Physics Letters; 10/14/2013, Vol. 103 Issue 16, p162903-162903-4, 1p, 4 Graphs
- Publication Year :
- 2013
-
Abstract
- The effect of residual stress on energy storage property was investigated for a series of PbZrO3 thin films on SrTiO3 and Si substrates. Compressive or tensile residual stress influences the critical electric field EA for the ferroelectric-to-antiferroelectric phase transition, thus for films with (110)/(101) orientation, energy density W of films on SrTiO3 is 38% larger than films on Si; in contrast, (001)-oriented PbZrO3 films on SrTiO3 show slightly smaller W compared to films on Si. We conclude that the different responses of W to stress are related to the different constrain states in films with different orientations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 91552481
- Full Text :
- https://doi.org/10.1063/1.4825336