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Tight-binding molecular dynamics has been used to simulate vibrationally excited Si–H and Si–D modes. Simulations find that vibrationally excited Si–D bending modes decay much more rapidly than Si–H bending modes, resulting in SiD bonds having much higher stability than SiH bonds. This provides a viable mechanism for reduced degradation in deuterated metal–oxide–semiconductor transistors and deuterated amorphous silicon devices. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H[sub 2][sup *] defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]