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1. Microscopic nature of Staebler-Wronski defect formation in amorphous silicon.

Author

Biswas, R. and Pan, B. C.

Subjects
*SILICON, *AMORPHOUS semiconductors, *MOLECULAR dynamics, *SOLAR cells
Abstract

Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H[sub 2][sup *] defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
1998
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