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The growth of a wide range of binary nitride films with excellent properties is reported. These films are deposited by thermal laser epitaxy (TLE). If equipped with CO2–laser substrate heating, TLE allows growth temperatures ≫ 1000 °C combined with strong nitriding conditions, which are established by using ammonia (NH3) gas as a nitrogen precursor. Films deposited on c-plane sapphire substrates include semiconducting nitrides (BN, AlN, ScN, and YN), superconducting nitrides (TiN, VN, ZrN, and NbN), and magnetic nitrides (CrN and GdN). The superconducting transition temperatures of TiN, VN, ZrN, and NbN films are 5.7, 8.9, 8.9, and 16.9 K, respectively. The Néel temperature of CrN films is ≃280 K, and the Curie temperature of GdN films is 66 K; both lie within the reported ranges. The controlled fabrication of different phases of individual nitride compounds is explored, revealing that subnitride phases can be grown at lower NH3 pressures. This study also demonstrates the heteroepitaxial growth of multilayer nitride films on c-plane sapphire.

Superconducting films of α-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, α-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for α-Ta films, which allows for the growth of these films with an unprecedented quality. Using this method, high quality α-Ta films are deposited at a comparably high substrate temperature of 1150 °C. They are single-phase α-Ta and have a single out-of-plane (110) orientation. They consist of grains ≥2 μm that have one of three possible in-plane orientations. As shown by scanning transmission electron microscopy and electron energy loss studies, the substrate–film interfaces are sharp with no observable intermixing. The obtained insights into the epitaxial growth of body-centered-cubic films on quasi-hexagonal substrates lay the basis for harnessing the high structural coherence of such films in various applications.

Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F+ centers.

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98% Ga2O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of β-Ga2O3 by conventional MBE. As a result, a growth rate of ∼1 µm/h is readily achieved at a relatively low growth temperature (Tsub ≈ 525 °C), resulting in films with high structural perfection and smooth surfaces (rms roughness of

Utilizing the powerful combination of molecular-beam epitaxy (MBE) and angle-resolved photoemission spectroscopy (ARPES), we produce and study the effect of different terminating layers on the electronic structure of the metallic delafossite PdCoO2. Attempts to introduce unpaired electrons and synthesize new antiferromagnetic metals akin to the isostructural compound PdCrO2 have been made by replacing cobalt with iron in PdCoO2 films grown by MBE. Using ARPES, we observe similar bulk bands in these PdCoO2 films with Pd-, CoO2-, and FeO2-termination. Nevertheless, Pd- and CoO2-terminated films show a reduced intensity of surface states. Additionally, we are able to epitaxially stabilize PdFexCo1−xO2 films that show an anomaly in the derivative of the electrical resistance with respect to temperature at 20 K, but do not display pronounced magnetic order.

We have studied the growth of epitaxial films of stannate pyrochlores with a general formula A2Sn2O7 (A = La and Y) and find that it is possible to incorporate ∼25% excess of the A-site constituent; in contrast, any tin excess is expelled. We unravel the defect chemistry, allowing for the incorporation of excess A-site species and the mechanism behind the tin expulsion. An A-site surplus is manifested by a shift in the film diffraction peaks, and the expulsion of tin is apparent from the surface morphology of the film. In an attempt to increase La2Sn2O7 conductivity through n-type doping, substantial quantities of tin have been substituted by antimony while maintaining good film quality. The sample remained insulating as explained by first-principles computations, showing that both the oxygen vacancy and antimony-on-tin substitutional defects are deep. Similar conclusions are drawn on Y2Sn2O7. An alternative n-type dopant, fluorine on oxygen, is shallow according to computations and more likely to lead to electrical conductivity. The bandgaps of stoichiometric La2Sn2O7 and Y2Sn2O7 films were determined by spectroscopic ellipsometry to be 4.2 eV and 4.48 eV, respectively.

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to over 1 μm h−1 in an adsorption-controlled regime, combined with excellent crystallinity. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 μm h−1 and 1.5 μm h−1 for Ga2O3/Al2O3 and Ga2O3/Ga2O3 structures, respectively, with very high crystalline quality at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular beams of targeted suboxides with a kinetic model developed for the S-MBE of III–VI compounds to identify appropriate growth conditions. Using S-MBE, we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4.5 μm. With the high growth rate of S-MBE, we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide range of oxides. With respect to growth rates and crystalline quality, S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices.

We present a study of the trade-off between the retention and variability of SrTiO3-based memristive devices. We identified the applied switching current and the device stoichiometry as main influence factors. We show that the SrO formation at the electrode interface, which has been revealed to improve the device retention significantly, is associated with an increased cycle-to-cycle and device-to-device variability. On the other hand, devices with homogeneous, Ti-terminated SrTiO3–Pt interfaces exhibit poor retention but the smallest variability. These results give valuable insights for the application of memristive SrTiO3 devices as non-volatile memory or in neural networks, where the control of variability is of key relevance.

We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high miscut, which stabilizes the growth of additional SrO at the bottom interface. We prove the success of this strategy utilizing transmission electron microscopy. We find that these antiphase boundaries significantly influence the resistive switching properties. In particular, devices based on SrTiO3 thin films with intentionally induced antiphase boundaries do not require a forming step, which is ascribed to the existence of preformed filaments.