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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

Authors :
Patrick Vogt
Felix V. E. Hensling
Kathy Azizie
Celesta S. Chang
David Turner
Jisung Park
Jonathan P. McCandless
Hanjong Paik
Brandon J. Bocklund
Georg Hoffman
Oliver Bierwagen
Debdeep Jena
Huili G. Xing
Shin Mou
David A. Muller
Shun-Li Shang
Zi-Kui Liu
Darrell G. Schlom
Source :
APL Materials, Vol 9, Iss 3, Pp 031101-031101-13 (2021)
Publication Year :
2021
Publisher :
AIP Publishing LLC, 2021.

Abstract

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to over 1 μm h−1 in an adsorption-controlled regime, combined with excellent crystallinity. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 μm h−1 and 1.5 μm h−1 for Ga2O3/Al2O3 and Ga2O3/Ga2O3 structures, respectively, with very high crystalline quality at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular beams of targeted suboxides with a kinetic model developed for the S-MBE of III–VI compounds to identify appropriate growth conditions. Using S-MBE, we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4.5 μm. With the high growth rate of S-MBE, we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide range of oxides. With respect to growth rates and crystalline quality, S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices.

Details

Language :
English
ISSN :
2166532X
Volume :
9
Issue :
3
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.06694ae20774f82ab53c73b78d5b868
Document Type :
article
Full Text :
https://doi.org/10.1063/5.0035469