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This paper presents a novel strategy to achieve conformal FINFET extension doping with low tilt-angle beam-line ion implantation. The process relies on the self-aligned cap layer formation exclusively on top of the FIN to tune doping levels in this particular area by partial dopant trapping. The conformality itself is evaluated for n- and p-type dopants by a novel extraction method applied to FIN resistor test structures. Furthermore, the process was integrated into a full NMOS device flow and compared to a highly tilted and more conformal As implant condition. [ABSTRACT FROM AUTHOR]

This paper discusses on the impact of gate stack engineering on the low-frequency noise performance of state-of-the-art deep submicron planar CMOS technologies. Focus is on the scaling of the Equivalent Oxide Thickness (EOT) in high-k gate oxides in combination with metal gates, requiring the implementation of cap layers. As will be shown, different trends in the LF noise can be observed, indicating that LF noise optimization is a complex interplay between the different gate stack components. [ABSTRACT FROM AUTHOR]

This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are studied using Secondary Ion Mass Spectrometry, sheet resistance and using four point probe and RsL. Profiles with junction depths ranging from 10–12 nm and sheet resistance values below 800 Ohm/sq are readily achievable. [ABSTRACT FROM AUTHOR]

During the last years, a comprehensive VME-based data acquisition system for counter applications was developed. This package called ABLASS (A Beam Loss measurement And Scaling System) is used at the GSI heavy ion synchrotron (SIS18), at the high energy beam transfer lines (HEBT) and at the connected experiments. To achieve a maximum of experimental rate capability and to protect sensitive targets from significant intensity peaks, the particle distribution within the slowly extracted bunched beam has to be qualified. To analyze this spill-microstructure by means of scintillator pulses, new sophisticated tools were invented, such as Q-Analysis, which generates evaluated data in the μS-region. To measure the time distribution of the particles relative to the bunching RF-phase and the probability curve of consecutive particle hits in the ns-regime, a VME Multihit TDC with 25ps time resolution was implemented into ABLASS. The principle and outcome of these new methods substantiated by actual ion beam data will be presented. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR]

At the GSI Synchrotron (SIS18) and the high-energy beam transfer lines (HEBT) several particle counting detectors of different types are installed. These are connected to one dedicated 128-Channel VME based data acquisition system called “A Beam Loss Measurement and Scaling System (ABLASS),” which was recently added to the GSI control system. An overview of all its implemented features is given. Experiences gained during daily operation as well as the more sophisticated applications such as high-resolution spill structure analysis with up to 100-kHz sample rate and slow extraction optimization are presented. In addition the SIS18 is going to be the injector for the planned superconducting double ring facility SIS100/300, which is part of the GSI future project, which was recently named FAIR, the international Facility for Antiproton and Ion Research. Therefore the observation of beam losses at the SIS18 produced by the required high currents is essential to prevent activation and vacuum instabilities. The methods for the beam loss measurement are described. © 2004 American Institute of Physics [ABSTRACT FROM AUTHOR]

Particle counters perform the control of beam loss and slowly extracted currents at the heavy ion synchrotron (SIS) at GSI. For these devices a new data acquisition system has been developed with the main intention to combine the operating purposes beam loss measurement, spill analysis, spill structure measurement and matrix switching functionality in one single assembly. To provide a reasonable digital selection of counters at significant locations a modular VME setup based on the GSI data acquisition software MBS (Multi Branch System) was chosen. An overview of the design regarding the digital electronics and the infrastructure is given. Of main interest in addition to the high performance of the used hardware is the development of a user-friendly software interface for hardware controls, data evaluation and presentation to the operator. [ABSTRACT FROM AUTHOR]

The new 1.4 MeV/u high current injector for the Unilac successfully commissioned in 1999 is now accelerating heavy ions close to the calculated intensities. For example an [sup 40]Ar[sup 1+] beam with 8 emA allows to fill the GSI synchrotron to its inherent intensity limit. For emittance measurements of such intense beams a single shot pepperpot system has been developed. An overview of the hard- and software including mathematical algorithms is given. Results of emittance measurements at different intensities and energies are presented. The influence of stripping and related space charge effects on the emittance could be investigated. [ABSTRACT FROM AUTHOR]

Spectral analysis of hot stars requires adequate model atmospheres which properly take into account the effects of NLTE and radiation-driven winds. We present our approach in constructing detailed atmospheric models and synthetic spectra for O-type stars. This tool not only provides a method for O-star diagnostics (allowing to obtain physical constraints on the properties of stellar winds, stellar parameters, and abundances via comparison of observed and synthetic spectra), but also permits the astrophysically important information about the ionizing fluxes of these stars to be determined. We demonstrate the astrophysical potential of the method with an application to a sample of O-type stars. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]