Search

This work introduces a new mathematical model for viscothermoelastic semiconducting solid spheres of ceramic materials considering the photothermal interaction using three types of the Green–Naghdi heat conduction model. The outer surface of a solid sphere is loaded thermally using ramp-type heat as a boundary condition. Following that, Laplace transforms and their inversion forms have been applied. The figures show that the mechanical relaxation time and ramp-time heat parameters have significant effects on the increase in carrier density and temperature, in addition to strain, displacement, the average of principal stresses, and the strain-energy density. The energy produced by viscothermoelastic semiconducting materials based on photothermal interaction may be controlled by the ramp-time heat parameter. The novelty of this work is to test the three types of the Green–Naghdi heat conduction model and apply the model to zirconia, a ceramic material.

This paper presents the results of an investigation that focuses on the stochastic wave propagation that occurs within an elastic medium when the thermoelectric properties are taken into consideration. It has been found that there is a clear association between the characteristics of electrical conductivity and thermal conductivity. As a result, the current topic focuses on the influence a magnetic field has on the variable thermal conductivity and electrical conductivity that exists within a material. This is done within the context of dual phase lag thermoelasticity. Several parameters are incorporated into the governing equations, which exhibit coupling. Thermal shock has been applied to the boundary of the medium that represents the non-traction barrier. At the border of the problem, stochasticity is imposed in order to make the problem appear more realistic. Within the boundary conditions, it is presumed that the white-noise function is present. Utilizing the Laplace transform method is the approach that is taken to address the issue. It is possible to determine the inverse transformations using numerical approximation approaches. Both graphical and visual analyses are performed on the dataset. In conclusion, graphical representations are utilized in order to make comparisons between the deterministic and stochastic solutions of all physical fields.

This study examines a new model for a solid semiconductor porosity medium with variable thermal conductivity under photo-thermoelastic conditions using two-temperature theory. A normal mode analysis is carried out to solve the equations in two dimensions analytically while taking into account the linear relationship between thermal conductivity and temperature. Physical fields, such as carrier density distribution, temperature, stress, and displacement, are then determined. The interaction between plasma and elastic waves is also considered. The simulation is conducted using silicon material, and the numerical calculations are illustrated graphically. This study investigates the effects of different porosity parameters (with and without porosity), thermal variable conductivity, and the two-temperature parameter on the physical field values.

This paper presents a theoretical investigation of linear thermal conductivity temperature-dependent coupled elasto-thermoelectronic diffusion (ETD) waves in a micro-temperature semiconductor, specifically focusing on the effects of photo-excited processes. The governing equations are formulated for a semi-infinite silicon wafer, which serves as a semiconductor material. The explicit study of the strong coupling between the equations governing elastic wave transport, carrier (plasma) transport, and thermal wave transport is conducted in the presence of microtemperature influence. The electron–hole interaction is obtained within the framework of the ETD theory. Laplace transform is used to resolve the governing equations in a non-dimensional framework for thermoelastic and electronic deformation in one-dimensional (1D) scenarios. The present study employs the proposed model to analyze the impact of ramp-type heating on a stationary plane of unbounded semiconductor material. Thermoelastic electronic coupling is found to be affected by the presence of variable thermal conductivity and microtemperature parameters.

The Susceptible-Exposed-Infectious-Recovered (SEIR) model is an established and appropriate approach in many countries to ascertain the spread of the coronavirus disease 2019 (COVID-19) epidemic. We wished to create a new COVID-19 model to be suitable for patients in any country. In this work, a modified SEIR model was constructed. We used the real data of COVID-19 spread in Saudi Arabia for statistical analyses and complex analyses. The reproduction number and detailed review of stability demonstrated the complexities of our proposed SEIR model. The solution and equilibrium condition were explored based on Jacobian’s linearization approach to the proposed SEIR model. The state of equilibrium was demonstrated, and a stability study was conducted in the disease-free environment. The reproduction number was measured sensitively against its internal parameters. Using the Lyapunov principle of equilibrium, the overall consistency of balance of our model was demonstrated. Findings using the SEIR model and observed outcomes due to COVID-19 spread in Saudi Arabia were compared. The modified SEIR model could enable successful analyses of the spread of epidemics such as COVID-19. An “ideal protocol” comprised essential steps to help Saudi Arabia decelerate COVID-19 spread. The most important aspects are to stay at home as much as possible and for infected people to remain in an isolated zone or secure area.

This paper presents a theoretical investigation of linear thermal conductivity temperature-dependent coupled elasto-thermoelectronic diffusion (ETD) waves in a micro-temperature semiconductor, specifically focusing on the effects of photo-excited processes. The governing equations are formulated for a semi-infinite silicon wafer, which serves as a semiconductor material. The explicit study of the strong coupling between the equations governing elastic wave transport, carrier (plasma) transport, and thermal wave transport is conducted in the presence of microtemperature influence. The electron–hole interaction is obtained within the framework of the ETD theory. Laplace transform is used to resolve the governing equations in a non-dimensional framework for thermoelastic and electronic deformation in one-dimensional (1D) scenarios. The present study employs the proposed model to analyze the impact of ramp-type heating on a stationary plane of unbounded semiconductor material. Thermoelastic electronic coupling is found to be affected by the presence of variable thermal conductivity and microtemperature parameters. [ABSTRACT FROM AUTHOR]