Response of photo-elasto-electric semiconductor porosity medium according to changing thermal conductivity with two-temperature

This study examines a new model for a solid semiconductor porosity medium with variable thermal conductivity under photo-thermoelastic conditions using two-temperature theory. A normal mode analysis is carried out to solve the equations in two dimensions analytically while taking into account the linear relationship between thermal conductivity and temperature. Physical fields, such as carrier density distribution, temperature, stress, and displacement, are then determined. The interaction between plasma and elastic waves is also considered. The simulation is conducted using silicon material, and the numerical calculations are illustrated graphically. This study investigates the effects of different porosity parameters (with and without porosity), thermal variable conductivity, and the two-temperature parameter on the physical field values.