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In this study, a split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate was fabricated. Through experiment and analysis, it was discovered that by applying a constant potential (usually 0 V or negative potential) to the auxiliary gate, a negative bias can be formed between the auxiliary gate and the channel. This consumes the two-dimensional electron gas in the channel, leading to significant improvements in the saturation characteristics of split-gate devices. By applying different potentials to the main gate and the auxiliary gate, a variety of device working modes can be obtained, and the threshold voltage can be altered across a large range. These advantages make split-gate devices with auxiliary gates more suitable for increasingly complex integrated circuit applications. [ABSTRACT FROM AUTHOR]

This paper demonstrates the improvement of device linearity in AlGaN/GaN heterostructure field effect transistors (HFETs) using polarization Coulomb field (PCF) scattering and investigates the relationship between device linearity and PCF scattering under 10 and 20 V drain bias. The mobility of the gate-to-source region in AlGaN/GaN HFETs is calculated using the Monte Carlo method. We find that PCF scattering decreases with an increase in gate bias (from −3 to −0.5 V) under high field conditions, leading to lower gate-to-source resistance. Under 20 V drain bias, linearity is worse than under 10 V drain bias. The transconductance drop is significant in AlGaN/GaN HFETs, which damages linearity. By adopting an appropriate drain bias, PCF scattering can alleviate transconductance drop and improve the linearity of AlGaN/GaN HFETs. [ABSTRACT FROM AUTHOR]

AlGaN/GaN heterostructure field-effect transistors (HFETs) with three kinds of gate lengths were fabricated, and the theory of polarization Coulomb field (PCF) scattering with the electron systems in the AlGaN/GaN HFETs was studied. There are two methods of analysis and calculation of the PCF scattering in AlGaN/GaN HFETs: one is by considering the 2-dimensional electronic gas (2DEG) of the gate-source, gate-drain, and gate regions as three independent electron systems and the other is by considering the 2DEG of the drain–source channel as a unified electron system. The calculation and analysis of the additional polarization charges underneath the gate region for the prepared AlGaN/GaN HFETs indicate that the theory of PCF scattering in AlGaN/GaN HFETs with three independent electron systems is more accurate. [ABSTRACT FROM AUTHOR]