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Two-dimensional (2D) layered semiconductors have recently emerged as attractive building blocks for next-generation low-power nonvolatile memories. However, challenges remain in the controllable fabrication of bipolar resistive switching circuit components from these materials. Here, the experimental realization of lateral memtransistors from monolayer single-crystal molybdenum disulfide (MoS 2 ) utilizing a focused helium ion beam is reported. Site-specific irradiation with the focused probe of a helium ion microscope creates a nanometer-scale defect-rich region, bisecting the MoS 2 lattice. The reversible drift of these defects in the applied electric field modulates the resistance of the channel, enabling versatile memristive functionality. The device can reliably retain its resistance ratios and set/reset biases for 1180 switching cycles. Long-term potentiation and depression with sharp habituation are demonstrated. This work establishes the feasibility of ion irradiation for controllable fabrication of 2D memristive devices with promising key performance parameters, such as low power consumption. The applicability of these devices for synaptic emulation may address the demands of future neuromorphic architectures.

Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we describe the fabrication and performance of a memristor-like device that comprises a single TiO2 nanowire in contact with Au electrodes, demonstrating both high sensitivity to electrical stimuli and high levels of control. Through an electroforming process, a population of charged dopants is created at the interface between the wire and electrode that can be manipulated to demonstrate a range of device and memristor characteristics. In contrast to conventional two-terminal memristors, our device is essentially a diode that exhibits memristance in the forward bias direction. The device is easily reset to the off state by a single voltage pulse and can be incremented to provide a range of controllable conductance states in the forward direction. Electrochemical modification of the Schottky barrier at the electrodes is proposed as an underlying mechanism, and six-level memory operations are demonstrated on a single nanowire.

We have prepared flexible, transparent, and very conducting thin composite films from poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), filled with both arc discharge and HIPCO single-walled nanotubes, at high loading level. The films are of high optical uniformity. The arc discharge nanotube-filled composites were significantly more conductive, demonstrating DC conductivities of >10(5) S/m for mass fractions >50 wt %. The ratio of DC to optical conductivity was higher for composites with mass fractions of 55-60 wt % than for nanotube-only films. For an 80 nm thick composite, filled with 60 wt % arc discharge nanotubes, this conductivity ratio was maximized at sigma(DC)/sigma(Op) = 15. This translates into transmittance (550 nm) and sheet resistance of 75 and 80 Omega/square, respectively. These composites were electromechanically very stable, showing <1% resistance change over 130 bend cycles.