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A single nanoscale junction with programmable multilevel memory.
- Source :
-
ACS nano [ACS Nano] 2014 Nov 25; Vol. 8 (11), pp. 11724-9. Date of Electronic Publication: 2014 Oct 22. - Publication Year :
- 2014
-
Abstract
- Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we describe the fabrication and performance of a memristor-like device that comprises a single TiO2 nanowire in contact with Au electrodes, demonstrating both high sensitivity to electrical stimuli and high levels of control. Through an electroforming process, a population of charged dopants is created at the interface between the wire and electrode that can be manipulated to demonstrate a range of device and memristor characteristics. In contrast to conventional two-terminal memristors, our device is essentially a diode that exhibits memristance in the forward bias direction. The device is easily reset to the off state by a single voltage pulse and can be incremented to provide a range of controllable conductance states in the forward direction. Electrochemical modification of the Schottky barrier at the electrodes is proposed as an underlying mechanism, and six-level memory operations are demonstrated on a single nanowire.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 8
- Issue :
- 11
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 25323650
- Full Text :
- https://doi.org/10.1021/nn505139m