1. Steep slope transistors: Tunnel FETs and beyond
- Author
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Cristobal Alessandri, Pratyush Pandey, Alan Seabaugh, Leitao Liu, Sara Fathipour, Trond Ytterdal, Paolo Paletti, Hao Lu, Hua-Min Li, and Mina Asghari Heidarlou
- Subjects
Engineering ,Silicon ,chemistry.chemical_element ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,01 natural sciences ,Capacitance ,law.invention ,law ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,010302 applied physics ,Very-large-scale integration ,Hardware_MEMORYSTRUCTURES ,Subthreshold conduction ,business.industry ,Transistor ,Electrical engineering ,021001 nanoscience & nanotechnology ,Engineering physics ,chemistry ,Logic gate ,Steep slope ,0210 nano-technology ,business ,Low voltage ,Hardware_LOGICDESIGN - Abstract
Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.
- Published
- 2016
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