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Steep slope transistors: Tunnel FETs and beyond
- Source :
- ESSDERC
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.
- Subjects :
- Engineering
Silicon
chemistry.chemical_element
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
01 natural sciences
Capacitance
law.invention
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
010302 applied physics
Very-large-scale integration
Hardware_MEMORYSTRUCTURES
Subthreshold conduction
business.industry
Transistor
Electrical engineering
021001 nanoscience & nanotechnology
Engineering physics
chemistry
Logic gate
Steep slope
0210 nano-technology
business
Low voltage
Hardware_LOGICDESIGN
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2016 46th European Solid-State Device Research Conference (ESSDERC)
- Accession number :
- edsair.doi...........9958d6ac02f3f096b81508e94c4a3cef
- Full Text :
- https://doi.org/10.1109/essderc.2016.7599658