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Steep slope transistors: Tunnel FETs and beyond

Authors :
Cristobal Alessandri
Pratyush Pandey
Alan Seabaugh
Leitao Liu
Sara Fathipour
Trond Ytterdal
Paolo Paletti
Hao Lu
Hua-Min Li
Mina Asghari Heidarlou
Source :
ESSDERC
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

Low voltage transistors are being developed to achieve steep, less than 60 mV/decade, subthreshold swings at room temperature. This paper outlines progress, technical challenges, and applications for these devices.

Details

Database :
OpenAIRE
Journal :
2016 46th European Solid-State Device Research Conference (ESSDERC)
Accession number :
edsair.doi...........9958d6ac02f3f096b81508e94c4a3cef
Full Text :
https://doi.org/10.1109/essderc.2016.7599658