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Compact linear accelerators, with beam energies in the kiloelectron volt to megaelectron volt range, have applications in medicine, neutron/X-ray generation, surface modifications, etc. The size, weight, and power of existing accelerators preclude them from mass availability in portable formats. This paper presents a specific implementation of an ion accelerator architecture based on planar wafers with accelerating and focusing sections. Our low cost approach allows the control of the final ion beam energy with potential applications, for example, for accelerator-based ion implantation. In this paper, we demonstrate two important waferscale modules required to build a linear particle accelerator; these include (1) on-wafer voltage amplification for beam acceleration using Inductor-Capacitor (LC) resonators and (2) waferscale electrostatic quadrupole arrays (ESQA) to refocus the ion beams during transport. On-board LC resonators were developed using Printed Circuit Board fabrication processes to implement an LC element resonant at ∼16.6 MHz with a quality factor of 25. An energy gain of ∼250 eV was observed using a two wafer acceleration unit with an argon ion beam with 6.5 keV initial energy. A 3 × 3 ESQA was fabricated on a glass wafer with metal electrodes formed by depositing copper metal around the beam apertures. The ESQA was used to focus and defocus an argon ion beam, demonstrating a field gradient of ∼500 V over a gap of ∼250 μm.

Compact linear accelerators, with beam energies in the kiloelectron volt to megaelectron volt range, have applications in medicine, neutron/X-ray generation, surface modifications, etc. The size, weight, and power of existing accelerators preclude them from mass availability in portable formats. This paper presents a specific implementation of an ion accelerator architecture based on planar wafers with accelerating and focusing sections. Our low cost approach allows the control of the final ion beam energy with potential applications, for example, for accelerator-based ion implantation. In this paper, we demonstrate two important waferscale modules required to build a linear particle accelerator; these include (1) on-wafer voltage amplification for beam acceleration using Inductor-Capacitor (LC) resonators and (2) waferscale electrostatic quadrupole arrays (ESQA) to refocus the ion beams during transport. On-board LC resonators were developed using Printed Circuit Board fabrication processes to implement an LC element resonant at ∼16.6 MHz with a quality factor of 25. An energy gain of ∼250 eV was observed using a two wafer acceleration unit with an argon ion beam with 6.5 keV initial energy. A 3 × 3 ESQA was fabricated on a glass wafer with metal electrodes formed by depositing copper metal around the beam apertures. The ESQA was used to focus and defocus an argon ion beam, demonstrating a field gradient of ∼500 V over a gap of ∼250 μm.

The recent decade brought many advances to plasmonics, but high power density plasmonic antennas designed to behave as heaters or operate in high temperature environments are still facing material stability challenges preventing their ultimate use. Gold has been the optimal choice among plasmonic materials but experiences morphology changes at temperature that result in device efficiency reduction and failure. Bulk titanium nitride has been explored as a solution but has deal-breaking tradeoffs in device quality factor. In this paper, we explore via proof-of-concept the use of a metal-ceramic composite structure to determine whether a bulk Au nanorod can provide strong plasmonic resonances while coated with an ultrathin conformal layer of titanium nitride or silica to provide morphological stability and sufficient plasmonic activity without excessive resonance quality degradation. We show SEM-level morphological stability for temperatures up to 500 °C with coatings below 4 nm. Computer modeling suggests the ultrathin titanium nitride has detrimental effects on the strong plasmonic resonances of a Au nanorod. We then looked into other possible coatings for solutions to stabilize high power density plasmonic antennas including plasmonic oxides, metal adhesion layers, and silica, the latter appearing to be the best option while lowering the overall peak electric field intensity, the silica increases the electric field intensity at its boundary.

III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to the coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation–dislocation and carrier–dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.

III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation-dislocation and carrier-dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.

Scattering scanning near-field optical microscopy enables optical imaging and characterization of plasmonic devices with nanometer-scale resolution well below the diffraction limit. This technique enables developers to probe and understand the waveguide-coupled plasmonic antenna in as-fabricated heat-assisted magnetic recording heads. In order to validate and predict results and to extract information from experimental measurements that is physically comparable to simulations, a model was developed to translate the simulated electric field into expected near-field measurements using physical parameters specific to scattering scanning near-field optical microscopy physics. The methods used in this paper prove that scattering scanning near-field optical microscopy can be used to determine critical sub-diffraction-limited dimensions of optical field confinement, which is a crucial metrology requirement for the future of nano-optics, semiconductor photonic devices, and biological sensing where the near-field character of light is fundamental to device operation.

Scattering scanning near-field optical microscopy enables optical imaging and characterization of plasmonic devices with nanometer-scale resolution well below the diffraction limit. This technique enables developers to probe and understand the waveguide-coupled plasmonic antenna in as-fabricated heat-assisted magnetic recording heads. In order to validate and predict results and to extract information from experimental measurements that is physically comparable to simulations, a model was developed to translate the simulated electric field into expected near-field measurements using physical parameters specific to scattering scanning near-field optical microscopy physics. The methods used in this paper prove that scattering scanning near-field optical microscopy can be used to determine critical sub-diffraction-limited dimensions of optical field confinement, which is a crucial metrology requirement for the future of nano-optics, semiconductor photonic devices, and biological sensing where the near-field character of light is fundamental to device operation.

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2.

Most of the stable elements have two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably strong isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (∼80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

Most of the stable elements have two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably strong isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ(T) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm-1K-1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart natSi with the natural isotopic constitution. For highly enriched crystal 28Si and crystal natSi, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (∼80 K). The κ(T) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. We calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. We calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K2CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K2CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

Manipulating dielectric properties of polydimethylsiloxane (PDMS) is an important consideration for flexible, low-loss device design. This paper presents a method for reducing dielectric loss (tan δ) by forming PDMS composites loaded with various concentrations of either alumina (Al2O3) or polytetrafluoroethylene (PTFE) particles. The structural, mechanical, and electrical properties of the composites are investigated. Theoretical mixing models were used to predict the relative permittivity (εr) of PDMS composites, and good similarity with the measured εr was observed. The incorporation of either low dielectric loss filler in the PDMS matrix (up to 50 wt. % filler loading) is shown to reduce the dielectric loss while maintaining the flexibility of the host matrix. The fillers can also control the permittivity of the composite, either increasing or decreasing relative permittivity from that of PDMS. Interestingly, a strain of ∼500% can be applied to 15 wt. % PDMS/PTFE composites, compared with ∼350% for pure PDMS.

This paper presents simulation, fabrication, and characterization of single-element ultrahigh frequency (100-300-MHz) needle ultrasonic transducers based on 0-3 composite Pb(Zr0.52Ti0.48)O3 (PZT) films prepared by using composite ceramic sol-gel film and sol-infiltration technique. The center frequency of the developed transducer at 300-MHz was the highest frequency of PbTiO3 ceramic-based ultrasonic transducers ever reported. Furthermore, a brief description of the composite model was followed by the development of a new expression for predicting the longitudinal velocity, the clamped dielectric constant, and the complex electromechanical coupling coefficient kt of these films, which is very important in ultrasonic transducer design. Moreover, these parameters are difficult to obtain by measuring the frequency dependence of impedance and phase angle because of the weak signal of the previous 0-3 composite films transducer (>100 MHz). The modeling results show that the Cubes model with a geometric factor n = 0.05 fits well with the measured data. This model will be helpful for developing the 0-3 composite systems for ultrahigh frequency ultrasonic transducer design.

This paper presents simulation, fabrication, and characterization of single-element ultrahigh frequency (100-300-MHz) needle ultrasonic transducers based on 0-3 composite Pb(Zr0.52Ti0.48)O3 (PZT) films prepared by using composite ceramic sol-gel film and sol-infiltration technique. The center frequency of the developed transducer at 300-MHz was the highest frequency of PbTiO3 ceramic-based ultrasonic transducers ever reported. Furthermore, a brief description of the composite model was followed by the development of a new expression for predicting the longitudinal velocity, the clamped dielectric constant, and the complex electromechanical coupling coefficient kt of these films, which is very important in ultrasonic transducer design. Moreover, these parameters are difficult to obtain by measuring the frequency dependence of impedance and phase angle because of the weak signal of the previous 0-3 composite films transducer (>100 MHz). The modeling results show that the Cubes model with a geometric factor n = 0.05 fits well with the measured data. This model will be helpful for developing the 0-3 composite systems for ultrahigh frequency ultrasonic transducer design.

In electron field emission experiments, a linear relationship in plots of slope vs. intercept obtained from Fowler-Nordheim analysis is commonly observed for single tips or tip arrays. By simulating samples with many tips, it is shown here that the observed linear relationship results from the distribution of input parameters, assuming a log-normal distribution for the radius of each tip. Typically, a shift from the lower-left to the upper-right of a slope-intercept plot has been correlated with a shift in work function. However, as shown in this paper, the same effect can result from a variation in the number of emitters. © 2013 AIP Publishing LLC.

In electron field emission experiments, a linear relationship in plots of slope vs. intercept obtained from Fowler-Nordheim analysis is commonly observed for single tips or tip arrays. By simulating samples with many tips, it is shown here that the observed linear relationship results from the distribution of input parameters, assuming a log-normal distribution for the radius of each tip. Typically, a shift from the lower-left to the upper-right of a slope-intercept plot has been correlated with a shift in work function. However, as shown in this paper, the same effect can result from a variation in the number of emitters. © 2013 AIP Publishing LLC.

This paper reports the room temperature cross-plane thermal conductivity of pure silica zeolite (PSZ) MEL and MFI thin films. PSZ MEL thin films were prepared by spin coating a suspension of MEL nanoparticles in 1-butanol solution onto silicon substrates followed by calcination and vapor-phase silylation with trimethylchlorosilane. The mass fraction of nanoparticles within the suspension varied from 16% to 55%. This was achieved by varying the crystallization time of the suspension. The thin films consisted of crystalline MEL nanoparticles embedded in a nonuniform and highly porous silica matrix. They featured porosity, relative crystallinity, and MEL nanoparticles size ranging from 40% to 59%, 23% to 47% and 55 nm to 80 nm, respectively. PSZ MFI thin films were made by in situ crystallization, were b-oriented, fully crystalline, and had a 33% porosity. Thermal conductivity of these PSZ thin films was measured at room temperature using the 3ω method. The cross-plane thermal conductivity of the MEL thin films remained nearly unchanged around 1.02±0.10 W m−1 K−1 despite increases in (i) relative crystallinity, (ii) MEL nanoparticle size, and (iii) yield caused by longer nanoparticle crystallization time. Indeed, the effects of these parameters on the thermal conductivity were compensated by the simultaneous increase in porosity. PSZ MFI thin films were found to have similar thermal conductivity as MEL thin films even though they had smaller porosity. Finally, the average thermal conductivity of the PSZ films was three to five times larger than that reported for amorphous sol-gel mesoporous silica thin films with similar porosity and dielectric constant.

This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosities of 25% and 45%, respectively. The pore diameters ranged from 3 to 18 nm and film thickness from 80 to 540 nm, while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3 omega method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with the data reported in literature for the silicon substrate and for high quality thermal oxide thin films with thicknesses ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized nonpropagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30 +/- 0.02 W/m K, while it was 0.20 +/- 0.01 W/m K for the hexagonal films. This corresponds to reductions of 79% and 86% from bulk fused silica at room temperature.

This paper presents a numerical method to predict the effective transport properties of multiphase functionally graded materials, accounting for the effects of random phase distribution and multiphase interactions. Firstly, the multiphase microstructures of such graded materials are reproduced by a random generation-growth algorithm, and then the corresponding transport governing equations are solved using a high-efficiency lattice Boltzmann method. The predicted effective electric and thermal conductivities agree well with the existing experimental data for both two- and three-phase functionally graded materials. Furthermore when the methodology is extended to other transport and even nontransport physical properties of multiphase composites, our simulated results still agree much better with the available experimental data than the existing theoretical models. This may exhibit the robusticity and wider applicability of the present approach. (c) 2007 American Institute of Physics.

The observation of pure phonon confinement effect in germanium nanowires is limited due to the illumination sensitivity of Raman spectra. In this paper we measured Raman spectra for different size germanium nanowires with different excitation laser powers and wavelengths. By eliminating the local heating effect, the phonon confinement effect for small size nanowires was clearly identified. We have also fitted the Raman feature changes to estimate the size distribution of nanowires. (c) 2007 American Institute of Physics.

This paper provides a full numerical tool set for modeling and predicting an effective apparent dielectric constant of multiphase microporous media, which includes a multiparameter random generation-growth algorithm for generating microstructures of multiphase porous media and a lattice Boltzmann solver for the electric potential transport equations through porous structures. After being validated by the theoretical solutions for simple geometries, the present methods are used to investigate the phase distribution effects on the effective dielectric constant of multiphase microporous media, including the effects of particle size, structure anisotropy, and phase aggregation caused by wetting characteristics between phases for multiphase cases. The resultant predictions at the end agree well with the existing experimental data for both two-phase and three-phase cases. (c) 2007 American Institute of Physics.

This paper aims at developing numerically validated models for predicting the through-plane effective index of refraction and absorption index of nanocomposite thin films. First, models for the effective optical properties of such materials are derived from previously reported analysis applying the volume averaging theory (VAT) to the Maxwell's equations. The transmittance and reflectance of nanoporous thin films are computed by solving the Maxwell's equations and the associated boundary conditions at all interfaces using finite element methods. The effective optical properties of the films are retrieved by minimizing the root mean square of the relative errors between the computed and theoretical transmittance and reflectance. Nanoporous thin films made of SiO2 and TiO2 consisting of cylindrical nanopores and nanowires are investigated for different diameters and various porosities. Similarly, electromagnetic wave transport through dielectric medium with embedded metallic nanowires are simulated. The numerical results are compared with predictions from widely used effective property models including (1) the Maxwell-Garnett Theory, (2) the Bruggeman effective medium approximation, (3) the parallel, (4) series, (5) Lorentz-Lorenz, and (6) the VAT models. Very good agreement is found with the VAT model for both the effective index of refraction and absorption index. Finally, the effect of volume fraction on the effective index of refraction and absorption index predicted by the VAT model is discussed. For certain values of wavelengths and volume fractions, the effective index of refraction or absorption index of the composite material can be smaller than that of both the continuous and dispersed phases. These results indicate guidelines for designing nanocomposite materials with desired optical properties.

This paper aims at developing numerically validated models for predicting the through-plane effective index of refraction and absorption index of nanocomposite thin films. First, models for the effective optical properties of such materials are derived from previously reported analysis applying the volume averaging theory (VAT) to Maxwell's equations. The transmittance and reflectance of nanoporous thin films are computed by solving Maxwell's equations and the associated boundary conditions at all interfaces using finite element methods. The effective optical properties of the films are retrieved by minimizing the root mean square of the relative errors between the computed and theoretical transmittance and reflectance. Nanoporous thin films made of SiO2 and TiO2 consisting of cylindrical nanopores and nanowires are investigated for different diameters and various porosities. Similarly, electromagnetic wave transport through dielectric medium with embedded metallic nanowires are simulated. The numerical results are compared with predictions from widely used effective property models including (1) the Maxwell-Garnett theory, (2) the Bruggeman effective medium approximation, (3) the parallel, (4) series, (5) Lorentz-Lorenz, and (6) the VAT models. Very good agreement is found with the VAT model for both the effective index of refraction and absorption index. Finally, the effect of volume fraction on the effective index of refraction and absorption index predicted by the VAT model is discussed. For certain values of wavelengths and volume fractions, the effective index of refraction or absorption index of the composite material can be smaller than that of both the continuous and dispersed phases. These results indicate guidelines for designing nanocomposite materials with desired optical properties. (c) 2007 American Institute of Physics.

Ionic polymer-metal composites (IPMCs) consist of a perfluorinated ionomer membrane (usually Nafion (R) or Flemion (R)) plated on both faces with a noble metal such as gold or platinum and neutralized with the necessary amount of counterions that balance the electrical charge of anions that are covalently fixed to the backbone ionomer. IPMCs are electroactive materials with potential applications as soft actuators and sensors. Their electrical-chemical-mechanical response is dependent on the cations used, the nature and the amount of solvent uptake, the morphology of the electrodes, the composition of the backbone ionomer, the geometry and boundary conditions of the composite element, and the magnitude and spatial and temporal variations of the applied potential. Our most recent experimental results show that solvents can have profound effects on the nature of the IPMCs' actuation. For example, we have discovered experimentally that Nafion-based IPMCs in Li+-form show very small back relaxation when hydrated, but extensive back relaxation with all other solvents that we have considered. On the other hand, the same membrane in the K+-form has extensive back relaxation when solvated with water, ethylene glycol, or glycerol, but none with 18-Crown-6. In the present paper, we seek to model the IPMCs' actuation and compare results with the experimental data. The modeling rests on the observation that a sudden application of a step potential (dc) of several volts (1-3 V) alters the distribution of cations within the ionomer, forcing cations out of the clusters near the anode and additional cations into the clusters near the cathode. The clusters within a thin boundary layer near the anode are thus depleted of their cations, while cations accumulate in the clusters near the cathode boundary layer. We first seek to determine the spatial and temporal variations of the cation distribution across the thickness of the IPMC for various cations and solvents, using an implicit finite difference numerical solution of the basic field equations, and compare the results with those of approximate analytical estimates. Based on this information, we then calculate the changes in the osmotic, electrostatic, and elastic forces that tend to expand or contract the clusters in the anode and cathode boundary layers. Finally, we calculate the amount of solvent out of or into the clusters that produces the bending motion of the cantilever. Comparing the model results with those of experimental measurement, we have arrived at remarkably good agreements. Indeed, our nanoscale-based model correctly predicts the unexpected influence of solvents on the actuation of IPMCs. (c) 2006 American Institute of Physics.

This paper presents the results of the numerical finite-difference time-domain analysis of a strongly localized antisymmetric plasmon, coupled across a nanogap between two identical metal wedges. Dispersion, dissipation, field structure, and existence conditions of such coupled wedge plasmons are determined and investigated on an example of the fundamental coupled mode. It is shown that in the general case there exist three critical wedge angles and a critical gap width (separation between the wedge tips). If the gap width is larger than the critical separation, then the antisymmetric wedge plasmons can exist only in the ranges between the first and the second critical angles, and between the third critical angle and 180 degrees. If the gap width is smaller or equal to the critical separation, then the third and the second critical angles merge, leaving only one interval of wedge angles within which the antisymmetric coupled wedge plasmons can exist. The effect of rounded edge tips is also investigated and is shown to be similar to that of different wedge angles. Feasibility of using these plasmons for the design of efficient subwavelength waveguides is discussed.

This paper presents growth orientation dependence of the piezoelectric polarization of InxGa1-xN and AlyGa1-yN layers lattice matched to GaN. This topic has become relevant with the advent of growing nitride based devices on semipolar planes [A. Chakraborty , Jpn. J. Appl. Phys., Part 2 44, L945 (2005)]. The calculations demonstrate that for strained InxGa1-xN and AlyGa1-yN layers lattice matched to GaN, the piezoelectric polarization becomes zero for nonpolar orientations and also at another point approximate to 45 degrees tilted from the c plane. The zero crossover has only a very small dependence on the In or Al content of the ternary alloy layer. With the addition of spontaneous polarization, the angle at which the total polarization equals zero increases slightly for InxGa1-xN, but the exact value depends on the In content. For AlyGa1-yN mismatched layers the effect of spontaneous polarization becomes important by increasing the crossover point to similar to 70 degrees from c-axis oriented films. These calculations were performed using the most recent and convincing values for the piezoelectric and elasticity constants, and applying Vegard's law to estimate the constants in the ternary InxGa1-xN and AlyGa1-yN layers.

The paper describes experiments on the generation and transport of a low energy (70-120 keV), high intensity (10-30 A/cm(2)) microsecond duration H+ ion beam (IB) in vacuum and plasma. The IB was generated in a magnetically insulated diode (MID) with an applied radial B field and an active hydrogen-puff ion source. The annular IB, with an initial density of j(i)similar to10-20 A/cm(2) at the anode surface, was ballistically focused to a current density in the focal plane of 50-80 A/cm(2). The postcathode collimation and transport of the converging IB were provided by the combination of a "concave" toroidal magnetic lens followed by a straight transport solenoid section. With optimized MID parameters and magnetic fields in the lens/solenoid system, the overall efficiency of IB transport at the exit of the solenoid 1 m from the anode was similar to 50% with an IB current density of 20 A/cm(2). Two-dimensional computer simulations of post-MID IB transport supported the optimization of system parameters. (C) 2004 American Institute of Physics.