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Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a change in the d-orbital occupation on the transition metal interface atoms with an applied electric field. However, a simple qualitative picture of how this occupation controls the magnetocrystalline anisotropy (MCA) and even why in certain cases the MCA has opposite sign still remains elusive. In this paper, we exploit a simple model of orbital populations to elucidate a number of features typical for the interface MCA and the effect of electric field on it, for 3d transition metal thin films used in magnetic tunnel junctions. We find that in all considered cases including the Fe (001) surface, clean Fe1-xCox(001)/MgO interface and oxidized Fe(001)/MgO interface, the effects of alloying and electric field enhance the MCA energy with electron depletion which is largely explained by the occupancy of the minority-spin dxz,yz orbitals. On the other hand, the hole doped Fe(001) exhibits an inverse VCMA, where the MCA enhancement is achieved when electrons are accumulated at the Fe (001)/MgO interface with applied electric field. In this regime we predict a significantly enhanced VCMA which exceeds 1pJ/Vm. Realizing this regime experimentally may be favorable for a practical purpose of voltage driven magnetization reversal.

Spin-filter tunneling is a promising way to generate highly spin-polarized current, a key component for spintronics applications. In this work we explore the tunneling conductance across the spin-filter material CoFe2O4 interfaced with Au electrodes, a geometry which provides nearly perfect lattice matching at the CoFe2O4/Au(001) interface. Using density functional theory calculations we demonstrate that interface states play a decisive role in controlling the transport spin polarization in this tunnel junction. For a realistic CoFe2O4 barrier thickness, we predict a tunneling spin polarization of about -60%. We show that this value is lower than what is expected based solely on considerations of the spin-polarized band structure of CoFe2O4, and therefore that these interface states can play a detrimental role. We argue this is a rather general feature of ferrimagnetic ferrites and could make an important impact on spin-filter tunneling applications., Comment: 5 pages, 4 Figures plus 1 page supplement