Search

We investigate the stability of MnPb$_{2}$Bi$_{2}$Te$_{6}$ (MPBT), which is predicted to be a magnetic topological insulator (TI), using density functional theory calculations. Our analysis includes various measures such as enthalpies of formation, Helmholtz free energies, defect formation energies, and dynamical stability. Our thermodynamic analysis shows that the phonon contribution to the energy gain from finite temperature is estimated to be less than 10~meV/atom, which may not be sufficient to stabilize MPBT at high temperatures, even with the most favorable reactions starting from binaries. While MPBT is generally robust against the formation of various defects, we find that anti-site defect formation of $\text{Mn}_{\text{Pb}}$ is the most likely to occur, with corresponding energy less than 60~meV. This can be attributed to the significant energy cost from compressive strain at the PbTe layer. Our findings suggest that MPBT is on the brink of stability in terms of thermodynamics and defect formation, underscoring the importance of conducting systematic analyses of the stability of proposed TIs, including MPBT, for their practical utilization. This study offers valuable insights into the design and synthesis of desirable magnetic TI materials with robust stabilities., Comment: 18 pages, 4 figures

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi2Te4 on ferroelectric In2Se3 or In2Te3, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi2Te4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures., Comment: 22 pages, 5 figures

Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material., Comment: Accepted in Advanced Functional Materials

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.

In order to tune the magnetic properties of the cleavable high-Curie temperature ferromagnet Fe$_{5-x}$GeTe$_2$, the effect of increasing the electron count through arsenic substitution has been investigated. Small additions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order in polycrystalline samples by quenching fluctuations on one of the three magnetic sublattices, whereas larger As concentrations decrease the ferromagnetic Curie temperature ($T_{\rm C}$) and saturation magnetization. This work also describes the growth and characterization of Fe$_{4.8}$AsTe$_2$ single crystals that are structurally analogous to Fe$_{5-x}$GeTe$_2$ but with some phase stability complications. Magnetization measurements reveal dominant antiferromagnetic behavior in Fe$_{4.8}$AsTe$_2$ with a N\'{e}el temperature of $T_{\rm N}$ $\approx$42K. A field-induced spin-flop below $T_{\rm N}$ results in a switch from negative to positive magnetoresistance, with significant hysteresis causing butterfly-shaped resistance loops. In addition to reporting the properties of Fe$_{4.8}$AsTe$_2$, this work shows the importance of manipulating the individual magnetic sublattices in Fe$_{5-x}$GeTe$_2$ and motivates further efforts to control the magnetic properties in related materials by fine tuning of the Fermi energy or crystal chemistry., Comment: Accepted for publication in 2D Materials, with accepted version online

We investigate the physical properties of the Shastry-Sutherland lattice material BaNd$_2$ZnO$_5$. Neutron diffraction, magnetic susceptibility, and specific heat measurements reveal antiferromagnetic order below 1.65 K. The magnetic order is found to be a 2-$\boldsymbol{Q}$ magnetic structure with the magnetic moments lying in the Shastry-Sutherland lattice planes comprising the tetragonal crystal structure of BaNd$_2$ZnO$_5$. The ordered moment for this structure is 1.9(1) $\mu_B$ per Nd ion. Inelastic neutron scattering measurements reveal that the crystal field ground state doublet is well separated from the first excited state at 8 meV. The crystal field Hamiltonian is determined through simultaneous refinement of models with both the LS coupling and intermediate coupling approximations to the inelastic neutron scattering and magnetic susceptibility data. The ground state doublet indicates that the magnetic moments lie primarily in the basal plane with magnitude consistent with the size of the determined ordered moment., Comment: 13 pages, 8 figures

The hierarchy of the coupling strengths in a physical system often engenders an effective model at low energies where the decoupled high-energy modes are integrated out. Here, using neutron scattering, we show that the spin excitations in the breathing pyrochlore lattice compound CuInCr$_4$S$_8$ are hierarchical and can be approximated by an effective model of correlated tetrahedra at low energies. At higher energies, intra-tetrahedron excitations together with strong magnon-phonon couplings are observed, which suggests the possible role of the lattice degree of freedom in stabilizing the spin tetrahedra. Our work illustrates the spin dynamics in CuInCr$_4$S$_8$ and demonstrates a general effective-cluster approach to understand the dynamics on the breathing-type lattices., Comment: 11 pages, 9 figures

We report the growth of the intrinsic magnetic topological system MnTe(Bi2Te3)n by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the n=1 phase MnBi2Te4 with 2.04.5) it is found that the n = 2 MnBi4Te7 phase is stabilized. Transport measurements indicate that the MnBi2Te4 and MnBi4Te7 undergo magnetic transitions around 25 K, and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped MnBi2Te4. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena., Comment: Accepted in Physical Review Materials

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$. Two native defects $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Te}}$ antisites can be well resolved in the topographic images. $\mathrm{Mn_{Bi}}$ tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at $\sim80$~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from $\mathrm{Bi_{Mn}}$ antisites at Mn sites. The random distribution of $\mathrm{Mn_{Bi}}$ and $\mathrm{Bi_{Mn}}$ antisites results in spatial fluctuation of local density of states near the Fermi level in $\mathrm{MnBi_2Te_4}$., Comment: 6 pages, 4 figures

MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4; such strain is further enhanced in MnBi4Te7, giving rise to even higher BiMn density. The abundance of intrinsic BiMn donors results in degenerate n-type conductivity under the Te-poor growth condition. Our calculations suggest that growths in a Te-rich condition can lower the Fermi level, which is supported by our transport measurements. We further show that the internal strain can also enable efficient doping by large-size-mismatched substitutional NaMn acceptors, which can compensate BiMn donors and lower the Fermi level. Na doping may pin the Fermi level inside the bulk band gap even at the Te-poor limit in MnBi2Te4. Furthermore, facile defect formation in MnSb2Te4 and its implication in Sb doping in MnBi2Te4 as well as the defect segregation in MnBi4Te7 are discussed. The defect engineering and doping strategies proposed in this paper will stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi2Te4, MnBi4Te7, and related compounds.

Fe5-xGeTe2 is a van der Waals material with one of the highest reported bulk Curie temperatures, $T_C$ ~ 310K. In this study, theoretical calculations and experiments are utilized to demonstrate that the magnetic ground state is highly sensitive to local atomic arrangements and the interlayer stacking. Cobalt substitution is found to be an effective way to manipulate the magnetic properties while also increasing the ordering temperature. In particular, cobalt substitution up to 30% enhances $T_C$ and changes the magnetic anisotropy, while approximately 50% cobalt substitution yields an antiferromagnetic state. Single crystal x-ray diffraction evidences a structural change upon increasing the cobalt concentration, with a rhombohedral cell observed in the parent material and a primitive cell observed for ~46% cobalt content relative to iron. First principles calculations demonstrate that it is a combination of high cobalt content and the concomitant change to primitive layer stacking that produces antiferromagnetic order. These results illustrate the sensitivity of magnetism in Fe5-xGeTe2 to composition and structure, and emphasize the important role of structural order/disorder and layer stacking in cleavable magnetic materials., Comment: This paper is a contribution to the joint Physical Review Applied and Physical Review Materials collection titled Two-Dimensional Materials and Devices

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with non-standard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. We propose that CoSn and RhPb deserve the community's attention for exploring flat band physics., Comment: 12pg 11fig

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

A triangular lattice selenide series of rare earth (RE), CsRESe2, were synthesized as large single crystals using a flux growth method. This series stabilized in either trigonal (R-3m) or hexagonal (P63/mmc) crystal systems. Physical properties of CsRESe2 were explored by magnetic susceptibility and heat capacity measurements down to 0.4 K. Antiferromagnetic interaction was observed in all magnetic compounds, while no long-range magnetic order was found, indicating the frustrated magnetism. CsDySe2 presents spin freezing at 0.7 K, revealing a spin-glass state. CsCeSe2 and CsYbSe2 present broad peaks at 0.7 K and 1.5 K in the magnetization, respectively, suggesting the short-range interactions between magnetic rare earth ions. The lack of signature for long-range magnetic order and spin freezing down to 0.4 K in these compounds (RE = Ce, Yb) implies their candidacy for quantum spin liquid state., Comment: 4 pages, 4 figures

Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time of flight (ToF) current spectroscopy. By combining the current waveform (CWF) ToF spectroscopy and the Monte Carlo (MC) simulation, three energy states were detected in the band gap of MAPbBr3. Additionally, we found the trapping and detrapping rates of free holes ranging from a few us to hundreds of us and, contrary to previous studies, a strong detrapping activity was revealed. It was shown that these traps have a significant impact on the transport properties of MAPbBr3 single crystal devices, including drift mobility and mobility-lifetime product. To demonstrate the impact of traps on the delay of free carriers, we developed a new model of the effective mobility valid for the case of multiple traps in a semiconductor. Our results provide a new insight on charge transport properties of OMHP semiconductors, which is required for further development of this class of optoelectronic devices., Comment: 21 page

Based on first-principles calculations, we show that chemically active metal ns2 lone pairs play an important role in exciton relaxation and dissociation in low-dimensional halide perovskites. We studied excited-state properties of several recently discovered luminescent all-inorganic and hybrid organic-inorganic zero-dimensional (0D) Sn and Pb halides. The results show that, despite the similarity in ground-state electronic structure between Sn and Pb halide perovskites, the chemically more active Sn2+ lone pair leads to stronger excited-state structural distortion and larger Stokes shift in Sn halides. The enhanced Stokes shift hinders excitation energy transport, which reduces energy loss to defects and increases the photoluminescence quantum efficiency (PLQE). The presence of the ns2 metal cations in the 0D halide perovskites also promotes the exciton dissociation into electron and hole polarons especially in all-inorganic compounds, in which the coupling between metal-halide clusters is significant., Comment: 14 pages,5 figures, submitted to Physical Review Materials on 13Dec2018

Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi level pinning. We reveal the ideal growth conditions to grow p-type Cs$_2$AgInCl$_6$ and Cs$_2$AgBiCl$_6$ as well as semi-insulating Cs$_2$AgBiBr$_6$ with low trap density for targeted photovoltaic or visible-light/radiation detection application., Comment: 12 pages, 10 figures

BAs was predicted to have an unusually high thermal conductivity at room temperature of 2000$\,$Wm$^{-1}$$\,$K$^{-1}$, comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is an order of magnitude lower. To identify the origin of this large inconsistency, we investigated the lattice structure and potential defects in BAs single crystals at atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration As vacancies ($V_\mathrm{As}$), as widely thought to dominate the thermal resistance in BAs crystals, our STEM results showed enhanced intensity of some B columns and reduced intensity of some As columns, suggesting the presence of antisite defects with As$_\mathrm{B}$ (As-atom on B site) and B$_\mathrm{As}$ (B-atom on As site) with significant concentrations. Further calculations show that the antisite pair with As$_\mathrm{B}$ next to B$_\mathrm{As}$ is preferred energetically among the different types of point defects investigated, and confirm that such defects lower the thermal conductivity for BAs. Using a concentration of 6.6$\pm$3$\times$10$^{20}$$\,$cm$^{-3}$ for the antisite pairs estimated from STEM images, thermal conductivity is estimated to be 65-100$\,$Wm$^{-1}$$\,$K$^{-1}$, in reasonable agreement with our measured value. Our study suggests that As$_\mathrm{B}$-B$_\mathrm{As}$ antisite pairs are the primary lattice defects suppressing thermal conductivity of BAs. Possible approaches are proposed for growth of high quality crystals or films with high thermal conductivity., Comment: 4 pages and 3 figures in main text; 4 pages and 4 figures in the Supplementary Material

Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can be stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. This suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers., Comment: new Sn(II) oxides with potential good p-type conductivity

Scintillators attract wide research interest for their distinct applications in radiation detection. Elpasolite halides are among the most promising scintillators due to their high structural symmetry and good scintillation performance. Better understanding of their underlying scintillation mechanism opens up new possibilities in scintillator development. In this work, we employ a variety of experimental techniques to study the two mixed-anion elpasolites Cs2NaRBr3I3 (R = La, Y). The emission of intrinsic Cs2NaRBr3I3 with a light yield ranging from 20,000 to 40,000 ph/MeV is dominant by self-trapped exciton emission. Partial substitution of R with Ce introduces a competing emission, the Ce3+ 5d to 4f radiative transition. Ab initio calculations were performed to investigate the electronic structures as well as the binding energies of polarons in Cs2NaRBr6. The calculated large self-trapped exciton binding energies are consistent with the observed high light yield due to self-trapped exciton emission. The unique electronic structure of halide elpasolites as calculated enhances the STE stability and the STE emission. The highly tunable scintillation properties of mixed-anion elpasolites underscore the role of their complex scintillation mechanism. Our study provides guidance for the design of new elpasolites scintillators with exceptional energy resolution and light yield desirable for applications., Comment: 12 pages, 14 figures, 60% of the work was presented at 2014 IEEE Nuclear Science Symposium and Medical Imaging Conference. The manuscript is pubilshed on Physical Review Applied

The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap 1 . We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba_{2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

Thermoelectric performance is of interest for numerous applications such as waste heat recovery and solid state energy conversion, and will be seen to be closely connected to topological insulator behavior. In this context we here report first principles transport and defect calculations for Bi$_{2}$Te$_{2}$Se in relation to Bi$_{2}$Te$_{3}$. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We discuss these results in terms of the topological insulator characteristics of these compounds., Comment: 10 pages, 12 figures

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory that hole doped Cu2O may be such a material. We find that hole-doped Cu2O has a high thermopower of above 200 microV/K even with doping levels as high as 5.5x10 20 cm-3 at 500 K, mainly attributed to the heavy valence bands of Cu2O. This is reminiscent of the cobaltate family of high performance oxide thermoelectrics and implies that hole-doped Cu2O could be an excellent thermoelectric material if suitably doped.

Elpasolites are a large family of halides which have recently attracted considerable interest for their potential applications in room-temperature radiation detection. Cs2LiYCl6 is one of the most widely studied elpasolite scintillators. In this paper, we will show hybrid density functional calculations on electronic structure, energetics of small electron and hole polarons and self-trapped excitons, and the excitation of luminescence centers (Ce impurities) in Cs2LiYCl6. The results provide important understanding in energy transport and scintillation mechanisms in Cs2LiYCl6 and rare-earth elpasolites in general.

CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the high resistivity in CdTe is due to the Fermi level pinning by native deep donors. The model based on shallow donor compensation of native acceptors was dismissed based on the assumption that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps.

Annealing the Ru metal that typically contains residual carbon impurities offers a facile way to grow graphene on Ru(0001) at the macroscopic scale. Two superstructures of the graphene/Ru(0001) interface with periodicities of 3.0-nm and 2.7-nm, respectively, have been previously observed by scanning tunneling microscopy. Using first-principles density functional theory, we optimized the observed superstructures and found interfacial C-Ru bonding of C atoms atop Ru atoms for both superstructures, which causes the graphene sheet to buckle and form periodic humps of ~1.7 A in height within the graphene sheet. The flat region of the graphene sheet, which is 2.2-2.3 A above the top Ru layer and has more C atoms occupying the atop sites, interacts more strongly with the substrate than does the hump region. We found that interfacial adhesion is much stronger for the 3.0-nm superstructure than for the 2.7-nm superstructure, suggesting that the former is the thermodynamically more stable phase. We explained the 3.0-nm superstructure's stability in terms of the interplay between C-Ru bonding and lattice matching., Comment: 16 pages; 5 figures

The electronic and magnetic properties of the excess Fe in iron telluride Fe$_{(1+x)}$Te are investigated by density functional calculations. We find that the excess Fe occurs with valence near Fe$^{+}$, and therefore provides electron doping with approximately one carrier per Fe, and furthermore that the excess Fe is strongly magnetic. Thus it will provide local moments that interact with the plane Fe magnetism, and these are expected to persist in phases where the magnetism of the planes is destroyed for example by pressure or doping. These results are discussed in the context of superconductivity.

We investigate the electronic and other properties of the hypothetical compound LiFeSb in relation to superconducting LiFeAs and FeSe using density functional calculations. The results show that LiFeSb in the LiFeAs structure would be dynamically stable in the sense of having no unstable phonon modes, and would have very similar electronic and magnetic properties to the layered Fe based superconductors. Importantly, a very similar structure for the Fermi surface and a spin density wave related to but stronger than that in the corresponding As compound is found. These results are indicative of possible superconductivity analogous to the Fe-As based compounds if the spin density wave can be suppressed by doping or other means. Prospects for synthesizing this material in pure form or in solid solution with FeTe are discussed., Comment: Additional discussion about superconductivity in the Fe materials in relation to chi(q) and experimental observations

We report density functional calculations of the electronic structure, Fermi surface, phonon spectrum, magnetism and electron-phonon coupling for the superconducting phase FeSe, as well as the related compounds FeS and FeTe. We find that the Fermi surface structure of these compounds is very similar to that of the Fe-As based superconductors, with cylindrical electron sections at the zone corner, cylindrical hole surface sections, and depending on the compound, other small hole sections at the zone center. As in the Fe-As based materials, these surfaces are separated by a 2D nesting vector at ($\pi$,$\pi$). The density of states, nesting and Fermi surface size increase going from FeSe to FeTe. Both FeSe and FeTe show spin density wave ground states, while FeS is close to an instability. In a scenario where superconductivity is mediated by spin fluctuations at the SDW nesting vector, the strongest superconductor in this series would be doped FeTe., Comment: Added note regarding recent experimental observations of superconductivity under pressure. Some additional discussion