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Liquid metal catalysts (LMCats), primarily molten copper, have demonstrated their efficiency in the chemical vapour deposition (CVD) approach for synthesising high-quality, large-area graphene. However, their high melting temperatures limit broader applications. Reducing the temperature of graphene production on LMCats would lead to a more efficient and cost-effective process. Here, we investigated the effects of alloying copper with a low-melting temperature metal on graphene growth in real-time. We examined a set of liquid copper-gallium alloy systems using two complementary in situ techniques: radiation-mode optical microscopy and synchrotron X-ray reflectivity (XRR). Microscopy observations revealed reduced catalytic activity and graphene quality degradation in compositions with gallium domination. The XRR confirmed the formation of single-layer graphene on alloys with up to 60 wt% of gallium. Additionally, we detected a systematic increase in adsorption height on the alloys' surface, suggesting a weaker graphene adhesion on gallium. These findings propose a trade-off between layer quality and production cost reduction is feasible. Our results offer insights into the CVD synthesis of graphene on bimetallic liquid surfaces and underscore the potential of gallium-copper alloys for enabling the direct transfer of graphene from a liquid substrate, thereby addressing the limitations imposed by high melting temperatures of conventional LMCats.

In this work, two different parametric hysteresis models, the Jiles-Atherton model and the Mel'gui relation, have been combined to form a more general hysteresis operator, suitable for the description of families of experimental B(H) curves obtained for low carbon (LC) steel specimens after isothermal annealing at different temperatures and times. As it has been demonstrated in a number of previous studies, characteristic values of steel hysteresis curves can be used as very efficient identifiers for the monitoring of the different metallurgical transformations that take place during the annealing, such as recovery and recrystallisation processes. It is thus important from a practical point to be able to reproduce the experimental curves obtained under different conditions, as precisely as possible, in order to proceed to the samples characterisation. Hybridisation of the two aforementioned models demonstrated satisfactory results for the reproduction of all considered curves obtained under the different considered annealing conditions.

Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxial strain induced by a $SiO_2$ ring platform on which flakes are placed by viscoelastic stamping. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices., Comment: 4 figures

Understanding the structural and magnetic properties in layered hybrid organic-inorganic metal halide perovskites (HOIPs) is key for their design and integration in spin-electronic devices. Here, we have conducted a systematic study on ten compounds to understand the effect of the transition metal (Cu$^{2+}$, Mn$^{2+}$, Co$^{2+}$), organic spacer (alkyl- and aryl-ammonium) and perovskite phase (Ruddlesden-Popper and Dion-Jacobson) on the properties of these materials. Temperature-dependent Raman measurements show that the crystals' structural phase transitions are triggered by the motional freedom of the organic cations as well as by the flexibility of the inorganic metal-halide lattice. In the case of Cu$^{2+}$ HOIPs, an increase of the in-plane anisotropy and a reduction of the octahedra interlayer distance is found to change the behavior of the HOIP from that of a 2D ferromagnet to that of a quasi-3D antiferromagnet. Mn$^{2+}$ HOIPs show inherent antiferromagnetic octahedra intralayer interactions and a phenomenologically rich magnetism, presenting spin-canting, spin-flop transitions and metamagnetism controlled by the crystal anisotropy. Co$^{2+}$ crystals with non-linked tetrahedra show a dominant paramagnetic behavior irrespective of the organic spacer and the perovskite phase. This work demonstrates that the chemical flexibility of HOIPs can be exploited to develop novel layered magnetic materials with tailored magnetic properties., Comment: 5 figures

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks., Comment: The document includes the main text and the supplementary materials. This is the accepted version of the work published in Science, 384, 6693 (2024)

A stochastic discrete slip approach is proposed to model plastic deformation in submicron domains. The model is applied to the study of submicron pillar ($D~\leq~1\mu m$) compression experiments on tungsten (W), a prototypical metal for applications under extreme conditions. Slip events are geometrically resolved in the specimen and considered as eigenstrain fields producing a displacement jump across a slip plane. This novel method includes several aspects of utmost importance to small-scale plasticity, i.e. source truncation effects, surface nucleation effects, starvation effects, slip localization and an inherently stochastic response. Implementation on an FFT-spectral solver results in an efficient computational 3-D framework. Simulations of submicron W pillars ($D~\leq~1\mu m$) under compression show that the method is capable of capturing salient features of sub-micron scale plasticity. These include the natural competition between pre-existing dislocations and surface nucleation of new dislocations. Our results predict distinctive flow stress power-law dependence exponents as well as a size-dependence of the strain-rate sensitivity exponent. The results are thoroughly compared with experimental literature., Comment: Published in International Journal of Plasticity

Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports., Comment: ACS Applied Materials and Interfaces, 2024

The objective of our research is to investigate the electrocatalytic properties of novel metal-free quantum dots (QDs) composed of the recently discovered 2D material penta-CN2, with the aim of replacing costly and scarce catalysts such as Pt and Pd. Employing a first-principles density functional theory (DFT) based approach, the geometries of the three penta-CN2 quantum dots (QDs) of increasing sizes, 3 x 3, 3 x 4, 4 x 4 are optimized. Through comprehensive analysis, our research extensively explored the structural stability of penta-CN2 QDs, delved into their electronic properties, and assessed their catalytic performance concerning the Hydrogen Evolution Reaction (HER). Notably, the H-adsorbed penta-CN2 QDs exhibit a significant reduction in the HOMO-LUMO gap (E_{g}) ranging from 35% to 49% compared to the pristine QD. Next, we investigated their catalytic performance relevant to HER, using well-known descriptors: (i) adsorption energy, (ii) over-potential, (iii) Gibbs free energy and (iv) exchange current density along with the volcano curve. As far as size dependence of the catalytic performance is concerned, the value of Delta G^{(av)} is minimum for 3 x 3 penta-CN2 QD, with those of 3 x 4 and 4 x 4 QDs being slightly larger. Our calculations predict a high value of exchange current density 2.24 x 10^{-3} A-cm^{-2} for one of the sites (N11 for 3 x 3 QD), which we believe will lead to significantly enhanced HER properties. Our research outcomes hold great promise in advancing the discovery of abundant, non-toxic, and cost-effective catalysts for HER, playing a vital role in facilitating large-scale hydrogen production.

The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer from the electron spin to the nuclei require the knowledge of the electron-nuclear interaction parameters, we have used high-frequency (94 GHz) electron-nuclear double resonance spectroscopy combined with first-principles density functional theory to investigate the hyperfine and nuclear quadrupole interactions of the basal and axial NV centers. We observed that the four inequivalent NV configurations (hk, kh, hh, and kk) exhibit different electron-nuclear interaction parameters, suggesting that each NV center may act as a separate optically addressable qubit. Finally, we rationalized the observed differences in terms of distinctions in the local atomic structures of the NV configurations. Thus, our results provide the basic knowledge for an extension of quantum protocols involving the 14N nuclear spin., Comment: 9 pages, 7 figures

Nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V^-1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures.

We report the magnetic, electrical, and magnetotransport (Hall effect) properties of the hexagonal itinerant ferromagnet Cr$_{0.83}$Te. Further, a comprehensive study of the magneto-entropy scaling behavior has been done around the Curie temperature of $T_C \approx$ 338 K. A maximum entropy change (-$\Delta S_{m}^{max}$) of 2.77 $J/kg-K$ and relative cooling power (RCP) of 88.29 $J/kg$ near the T$_C$ have been achieved under an applied magnetic field of 5 Tesla. The critical exponents, $\beta$ = 0.4739(4), $\gamma$ = 1.2812(3), and $\delta$ = 3.7037(5), have been extracted using the magneto-entropy scaling analysis. The obtained critical exponents indicate the presence of intricate magnetic interactions in Cr$_{0.83}$Te. On the other hand, the magnetotransport study reveals a topological Hall effect attributed to the noncoplanar spin structure coexisting with a robust magnetocrystalline anisotropy. Further, we observe that the extrinsic skew-scattering mechanism originated anomalous Hall effect. Our experimental findings of the anomalous and topological Hall effect properties in the presence of intriguing high-temperature itinerant ferromagnetism and magnetocaloric effect in Cr$_{0.83}$Te can offer potential technological applications at room temperature., Comment: 12 pages, 6 figures

We present a theoretical study of the formation of self-trapped excitons (STEs) and the associated broadband emission in metal-halide perovskites Cs$_4$SnBr$_6$ and Cs$_2$AgInCl$_6$, using time-dependent density functional theory (TDDFT) with the dielectric-dependent hybrid (DDH) functional. Our approach allows for an accurate description of the excitonic effect and geometry relaxation in the electronic excited states and yields optical gap, STE emission energy, and emission spectra in reasonable agreement with experiments. We point out the significance of considering geometry relaxations in the electronic excited state by showing that the exciton-phonon coupling computed in the ground-state atomic geometry is insufficient to describe the physical properties of STEs. Overall, we find that TDDFT with the DDH hybrid functional is a suitable approach for the study of the formation of STEs in perovskite and provides insights for designing metal-halide perovskites with tailored emission properties.

We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified $\mathbf{k}\cdotp \mathbf{p}$ approach. We find that for short-wavelength irradiation, the optical absorption in Na$_3$Bi is mainly due to inter-band electronic transitions. In contrast to the universal optical conductance observed for graphene, the optical conductivity for Na$_3$Bi based 3DDES depends on the radiation frequency but not on temperature, carrier density and electronic relaxation time. In the radiation wavelength regime of about 5 $\mu m<\lambda<$ 200 $\mu m$, an optical absorption window is found. This is similar to what is observed in graphene. The position and width of the absorption window depend on the direction of the light polarization and sensitively on temperature, carrier density, and electronic relaxation time. Particularly, we demonstrate that the inter-band optical absorption channel can be switched on and off by applying the gate voltage. This implies that similar to graphene, Na$_3$Bi based 3DDES can also be applied in infrared electro-optical modulators. Our theoretical findings are helpful in gaining an in-depth understanding of the basic optoelectronic properties of recently discovered 3DDESs.

Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.

We investigated the magnetic and electric properties of nanometer-sized vanadium dioxide (VO$_2$) particles. VO$_2$ nanoparticles were formed by milling VO$_2$ powder. We measured the magnetic field dependence of the magnetization of the VO$_2$ powder and nanoparticles. The VO$_2$ powder did not exhibit ferromagnetism, whereas the VO$_2$ nanoparticles exhibited ferromagnetism. In addition, we fabricated samples by bridging between electrodes with the VO$_2$ nanoparticles, and the temperature dependence of their resistance was measured. Metal-insulator transitions (MITs) were observed, and the temperature range where the MIT occurred was wider than that in a typical bulk VO$_2$. The VO$_2$ nanoparticles exhibited these properties of ferromagnetism and MIT possibly because of the surface and size effects of the VO$_2$ nanoparticles. These results indicate the first observation of the competitive coexistence of ferromagnetism and MIT of VO$_2$ nanoparticles., Comment: 6 pages, 6 figures

Mixed solid compounds are employed in a vast array of applications so an accurate determination of their chemical compositions is of crucial importance. All current characterization methods require specially-treated samples so the availability of a more practical method with similar accuracy should alleviate the quantification process. In this work, we show how the doping concentration $\delta$ (or isotope concentration) of a mixed solid compound in powdered form, where both parent compounds are diamagnetic, can be obtained from the measurement of the mass magnetization. We exploit the additive nature of the molar magnetic susceptibility $\chi_{Mol}$ and molar mass to construct two equations with the same two unknowns in the $\chi_{Mol}$ vs. $\delta$ space to simultaneously solve $\chi_{Mol}$ and $\delta$ of a mixed solid. Eight examples are provided to show the wide applicability of this method: NH$_{4(1-\delta)}$D$_{4\delta}$Br (where D = $^2$H), NH$_4$I$_{1-\delta}$Br$_\delta$, (NH$_4$H$_2$)$_{1-\delta}$(ND$_4$D$_2$)$_\delta$PO$_4$, C$_{48}$H$_{22+6\delta}$Br$_{6(1-\delta)}$O$_{32}$Zr$_6$, [creatine]$_{1-\delta}$[$_D$-glucose]$_\delta$, [$_L$-glutamic acid]$_{1-\delta}$[$_L$-leucine]$_\delta$, [terephthalic acid]$_{1-\delta}$[trimesic acid]$_\delta$ and [p-terphenyl]$_{1-\delta}$[triphenylphosphine]$_\delta$. Experimental errors of ~1.2% were obtained for $\delta$ from average sample masses of 16.6 mg in powdered form rendering the presented approach an attractive choice for characterizing the ratios of mixed solids., Comment: Main article: 19 pages, 12 Figures; Supplementary Information: 7 pages, 9 Tables and 4 Figures

This study compares thirteen natural and industrial samples of supplementary or emerging supplementary cementitious materials (SCMs): slag, fly ashes, pozzolan, obsidian, silica fume, and recycled glass. These materials are used or are under consideration for decarbonization in cement plants. XRF, XRD and Raman microspectroscopy were used in order to achieve a deeper understanding of the structural characterization of SCMs. The changes in position and shape of the XRD diffuse halos were compared. Raman spectroscopy was used to study the glass part of the SCM families, to better understand their structure in terms of depolymerization degree, angle, ring size and incorporations into the glass.The chemical composition of each glassy part was also estimated using reverse Bogue calculations. The hump position is correlated with the Raman shift, and with the XRF bulk or with the calculated glass chemical composition of SCMs, in terms of CaO/(SiO2+Al2O3) or network modifiers to formers ratios.

Semiconducting MXenes are an intriguing two-dimensional (2D) material class with promising electronic and optoelectronic properties. Here, we focused on recently prepared Hf-based MXenes, namely Hf$_3$C$_2$O$_2$ and Hf$_2$CO$_2$. Using the first-principles calculation and excited state corrections, we proved its dynamical stability, reconciled its semiconducting behavior, and obtained fundamental gaps by the many-body GW method (indirect 1.1 eV and 2.2 eV, respectively, direct 1.4 eV and 3.5 eV, respectively). Using the Bethe-Salpeter equation (BSE) we subsequently provided optical gaps (0.9 eV and 2.7eV, respectively), exciton binding energies, absorption spectra, and other properties of excitons in both Hf-based MXenes. The indirect character of both 2D materials further allowed a significant decrease of excitation energies by considering indirect excitons with exciton momentum along the $\Gamma$-M path in the Brillouin zone. The first bright excitons are strongly delocalized in real space while contributed by only a limited number of electron-hole pairs around the M point in the k-space from the valence and conduction band. A diverse range of excitonic states in Hf$_3$C$_2$O$_2$ MXene lead to a 4\% and 13\% absorptance for the first and second peaks in the infrared region of absorption spectra, respectively. In contrast, a prominent 28\% absorptance peak in the visible region appears in Hf$_2$CO$_2$ MXene. Results from radiative lifetime calculations indicate the promising potential of these materials in optoelectric devices requiring sustained and efficient exciton behavior.

In recent years, the skyrmion lattice phase with a short lattice constant has attracted attention due to its high skyrmion density, making it a promising option for achieving high-density storage memory and for observing novel phenomena like the quantized topological Hall effect. Unlike conventional non-centrosymmetric systems where the Dzyaloshinsky-Moriya interaction plays a crucial role, the short pitch skyrmion phase requires a quadratic magnetic interaction $J(q)$ with a peak at finite-$Q$, and weak easy-axis magnetic anisotropy is also critical. Thus, conducting first-principles evaluations is essential for understanding the formation mechanism as well as for promoting the discovery of new skyrmion materials. In this {\it Perspective}, we focus on recent developments of the first-principles evaluations of these properties and apply them to the prototype systems Gd$T_2X_2$ and Eu$T_2X_2$, where $T$ denotes a transition metal and $X$ represents Si or Ge. In particular, based on the spin density functional theory with the Hubbard correction combined with the Liechtenstein method in the Wannier tight-binding model formalism, we first show that the Hubbard $U$ and Hund's coupling is essential to stabilize a skyrmion lattice state by enhancing the easy-axis anisotropy. We then discuss mechanisms of finite-$Q$ instability and show that competition among Gd-5$d$ orbitals determines whether ferromagnetism or a finite-$Q$ structure is favored in Gd$T_2$Si$_2$ with $T=$ Fe and Ru. Our systematic calculations reveal that GdRu$_2$$X_2$, GdOs$_2$$X_2$, and GdRe$_2X_2$ are promising, while GdAg$_2X_2$, GdAu$_2X_2$, and EuAg$_2X_2$ are possible candidates as the skyrmion host materials. Analysis based on a spin spiral calculation for the candidate materials is also presented., Comment: 12 pages, 9 figures

Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses.

Two-dimensional (2D) materials provide an ideal platform to explore novel superconducting behavior including Ising superconductivity, topological superconductivity and Majorana bound states in different 2D stoichiometric Ta-, Nb-, and Fe-based crystals. However, tuning the element content in 2D compounds for regulating their superconductivity has not been realized. In this work, we report the synthesis of high quality Fe1+yTe with tunable Fe content by chemical vapor deposition (CVD). The quality and composition of Fe1+yTe are characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM). The superconducting behavior of Fe1+yTe crystals with varying Fe contents is observed. The superconducting transition of selected Fe1.13Te sample is sharp ({\Delta}Tc = 1 K), while Fe1.43Te with a high-Fe content shows a relative broad superconducting transition ({\Delta}Tc = 2.6 K) at zero magnetic field. Significantly, the conspicuous vortex flow and a transition from a 3D vortex liquid state to a 2D vortex liquid state is observed in Fe1.43Te sample. Our work highlights the tunability of the superconducting properties of Fe1+yTe and sheds light on the vortex dynamics in Fe-based superconductors, which facilitates us to understand the intrinsic mechanisms of high-temperature superconductivity., Comment: 30 pages, 15 figures, accepted by Advanced Functional Materials

Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory., Comment: 20 pages, 4 figures

Processes of diffusion of As and P atoms in InP and InAs, and atomic and energy structure of group-V vacancies and interstitial P and As atoms in InP and InAs have been investigated using density functional theory. Formation energies of group-V vacancies in InP and InAs and P and As interstitial atoms in InP and InAs have been calculated with hybrid functional. The main types of migration jumps have been determined, and the energy favorable migration paths and migration barriers of As and P atoms diffusion in InP and InAs via vacancies and interstitial atoms have been calculated using climbing image nudged elastic band method. In the case of diffusion of As and P atoms in InP and InAs via interstitial atoms the diffusion process occurs via indirect interstitial mechanism. The migration energy barriers for the vacancy diffusion mechanism are 1.5-2.0 eV, the migration energy barriers for the interstitialcy mechanism are 0.3-0.6 eV. The interstitial atoms have higher formation energies compared to the formation energies of the vacancies, and total activation energies of the diffusion are comparable for the vacancy and interstitialcy mechanisms. The obtained results will be useful for modeling of the diffusion processes in semiconductor structures based on InP and InAs.

Magnon spin currents in the ferrimagnetic garnet Tb3Fe5O12 with 4f electrons were examined through the spin-Seebeck effect and neutron scattering measurements. The compound shows a magnetic compensation, where the spin-Seebeck signal reverses above and below Tcomp = 249.5(4) K. Unpolarized neutron scattering unveils two major magnon branches with finite energy gaps, which are well-explained in the framework of spin-wave theory. Their temperature dependencies and the direction of the precession motion of magnetic moments, i.e. magnon polarization, defined using polarized neutrons, explain the reversal at Tcomp and decay of the spin-Seebeck signals at low temperatures. We illustrate an example that momentum- and energy-resolved microscopic information is a prerequisite to understanding the magnon spin current., Comment: 7 pages, 5 figures

The ac Harman method has been used for the direct estimation of dimensionless thermoelectric figure of merit (zT) through ac/dc resistance measurements. However, accurate zT estimation with a four-probe configuration is difficult owing to the occurrence of a thermal phase-delay in the heat flow with a low frequency current. This study reports an exact solution for zT estimation by solving the heat conduction equation. The analysis can explain the reverse heat flow, which is the main source of the error in the four-probe configuration, and the experimentally obtained behavior of the frequency dependence of zT of (Bi,Sb)$_2$Te$_3$. Approximately 20 % of the error is caused by a thermal phase-delay, unless an appropriate current frequency and voltage-terminal position are chosen. Thus, an accurate zT evaluation using a four-probe configuration at any voltage terminal position is achieved. These findings can lead to interesting thermoelectric metrology and could serve as a powerful tool to search for promising thermoelectric materials., Comment: 10 pages, 7 figures

NASA mandate is a human mission to Mars in the 2030s and sustained exploration of Mars requires in-situ resource utilization (ISRU). Exploiting the Martian water cycle (alongside perchlorate salts that depress the freezing point of water to less than 213K) and the available 95 volume percent atmospheric CO2, we detail an ultra-low temperature (255K) CO2-H2O electrolyzer to produce methane fuel and life-supporting oxygen on Mars. Methane production is thermodynamically favored across a range of operational pressures and temperatures and our electrolyzer polarization model concurred with reported experimental performance. A hypothetical 10-cell, 100 square cm electrode-area-per-cell electrolyzer produced 0.31g per W per day of CH4 and 3.54g per W per day of O2 at 2V per cell (operating voltage) versus 0.8g per W per day of O2 produced by the Mars Oxygen in-situ Resource Utilization Experiment (MOXIE) from the Mars 2020 mission (MOXIE produces no fuel). Material performance requirements are presented to show that this technology is an energy-efficient complement to the MOXIE high temperature approach.

The kinetics of the oxygen reduction reaction (ORR) on the practical air cathode in a Lithium air cell, which is conventionally composed of porous carbon with or without catalysts supported on it, was investigated. The mechanism and kinetics of the oxygen reduction reaction (ORR) was studied on a porous carbon electrode in an oxygen saturated solution of 0.1M Lithium bis-trifluoromethanesulfonimidate (LiTFSI) in Dimethoxyethane (DME) using cyclic voltammetery (CV) and the rotating ring-disk electrode (RRDE) technique. The oxygen reduction and evolution reactions were found to occur at similar potentials to those observed on a smooth, planar glassy carbon (GC) electrode. The effect of the porosity and the resultant increase in surface area were readily observed in the increase in the transient time required for the intermediates to reach the ring and the much larger disk currents (compared to smooth, planar GC) recorded respectively. The RRDE data was analyzed using a kinetic model previously developed by us and the rate constant of the elementary reactions calculated. The rates constant for the electrochemical reactions were found to be similar in magnitude to the rate constants calculated for smooth GC disks. The porosity of the electrode was found to decrease the rate of desorption of the intermediate and the product and delay their diffusion by shifting it from a Fickian regime in the electrolyte bulk to the Knudsen regime in the film pores. Thus, it is shown that the effect of the electrode porosity on the kinetics of the ORR is physical rather than electrochemical.

Grain alignment is a key factor that determines the performance of a superconducting bulk. In this study, the spark plasma texturing (SPT) technique was used to fabricate a CaKFe$_4$As$_4$ superconducting bulk. X-ray diffraction and electron backscatter diffraction revealed that the $c$-axes of the CaKFe$_4$As$_4$ grains in the SPT bulk are aligned, demonstrating that the SPT technique is effective in achieving $c$-axis texture. In addition, chemical composition analysis showed that oxide impurities, which affect the grain boundary characteristics that determine the inter-grain critical current density ($J_c$), are randomly distributed in the SPT bulk. Magnetization measurements showed high $J_c$ values of the SPT bulk, reaching 127 kA cm$^{-2}$ and 26 kA cm$^{-2}$ at 4.2 K under a self-field and magnetic field of 5 T, respectively. These results suggest that the SPT technique is a promising approach for obtaining a high-performance superconducting bulk material for high-field applications.

Nonlinear interactions of spin-waves and their quanta, magnons, have emerged as prominent candidates for interference-based technology, ranging from quantum transduction to antiferromagnetic spintronics. Yet magnon multiplication in the terahertz (THz) spectral region represents a major challenge. Intense, resonant magnetic fields from THz pulse-pairs with controllable phases and amplitudes enable high order THz magnon multiplication, distinct from non-resonant nonlinearities such as the high harmonic generation by below-band gap electric fields. Here, we demonstrate exceptionally high-order THz nonlinear magnonics. It manifests as 7$^\text{th}$-order spin-wave-mixing and 6$^\text{th}$ harmonic magnon generation in an antiferromagnetic orthoferrite. We use THz multi-dimensional coherent spectroscopy to achieve high-sensitivity detection of nonlinear magnon interactions up to six-magnon quanta in strongly-driven many-magnon correlated states. The high-order magnon multiplication, supported by classical and quantum spin simulations, elucidates the significance of four-fold magnetic anisotropy and Dzyaloshinskii-Moriya symmetry breaking. Moreover, our results shed light on the potential quantum fluctuation properties inherent in nonlinear magnons.

Noble gas atoms such as Kr and Xe are byproducts of nuclear fission in nuclear plants. How to trap and confine these volatile even radioactive gases is particularly challenging. Recent studies have shown that they can be trapped in nanocages of ultrathin silica. Here, we exhibit with self-consistent phonon theory and four-phonon (4ph) scattering where the adsorption of noble gases results in an anomalous increase in lattice thermal conductivity, while the presence of Cu atoms doping leads to a reduction in lattice thermal conductivity. We trace this behavior in host-guest 2D silica to an interplay of tensile strain, rattling phonon modes, and redistribution of electrons. We also find that 4ph scatterings play indispensable roles in the lattice thermal conductivity of 2D silica. Our work illustrates the microscopic heat transfer mechanism in 2D silica nanocages with the immobilization of noble gas atoms and inspires further exploring materials with the kagome and glasslike lattice thermal conductivity., Comment: 7 pages, 4 figures

Impurity $Fe^{3+}$ ion electron spin resonance (ESR) spectroscopy using multiple dielectric modes in a $SrTiO_3$ dielectric resonator has been performed with a tuneable DC magnetic field of up to $1.6~T$. The $Ti^{4+}(d^0)$ ion is substituted by $Fe^{3+}$ ion forming $FeO_6$ octahedral complex with an iron-oxygen-vacancy $(Fe^{3+}-V_O)$. In such a metal-ligand complex, a giant g-factor of $g_{\scriptscriptstyle\parallel F} = 5.51$ was observed in the ferroelectric phase at $20~mK$. The the change of $Fe^{3+}$ ion center-symmetry in the $FeO_6$ complex as a soft-mode characteristics of ferroelectric phase transition and the influences of iron-oxygen-vacancy $(Fe^{3+}-V_O)$, interactively sensitive to asymmetry in the octahedral rotational parameter $\Phi$ in $SrTi0_3$.

The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism., Comment: 23 pages, 15 figures, submitted version

The synthesis, structural, and luminescence properties have been carried out for Cr3+-activated Al2(WO4)3 (AWO) and Sc2(WO4)3 (SWO) phosphors for application in pc-NIR LED. Upon blue excitation, these compounds are capable of exhibiting broadband NIR emission stems primarily from 4T2-->4A2 transition in the range of 670-1200 nm (maxima ~808 nm, FWHM ~140 nm) for AWO:Cr and of 700-1300 nm (maxima ~870 nm, FWHM ~164 nm) for SWO:Cr. The significant shift of NIR emission is attributed to the substitution of AlO6 with larger ScO6 octahedrons. To gain insight into the luminescence the crystal field strength, Racah parameters, nephelauxetic effect, and electron-phonon coupling have been analyzed based on spectroscopic results. The electron-phonon coupling parameter S for SWO:Cr was determined to be 11.5, twice as large as that for AWO:Cr, which is in accordance with its strong thermal quenching. The abrupt changes occurring at 275 K in temperature-dependent luminescence spectra and decay lifetime of AWO:Cr is associated with temperature-driven phase transformation from low-temperature monoclinic to high-temperature orthorhombic phase. Pressure induced amorphization of AWO:Cr at pressures higher than 25 kbar was confirmed by employing high pressure evolution of Raman spectra. A high-power NIR pc-LED, fabricated by coating AWO:0.04Cr on a commercial 470 nm LED chip, shows good performance with an output power of 17.1 mW driven by a current of 320 mA, revealing potential application of studied materials for NIR light source., Comment: 19 pages, 7 figures

With help of ab initio density functional theory calculation, DFT+U, and hybrid functional HSE06, we revisit the layer dependent electronic structure and magnetic properties of pristine and 3d transition metal Cr doped MoS$_2$ monolayer and multilayers. Our results show that the dopant Cr atoms prefer to stay at nearest neighbor distances. In the multilayers, they prefer to remain in the outermost surface layers. Matching with the experimental band gap, the optimized U parameter we report is 4 eV. The band gap of the Cr doped monolayer is indirect, confirming the experimental observation from photoluminescence experiments. The HSE06 calculation for Cr doped monolayer shows that the band gap of doped Cr MoS$_2$ monolayer is indirect and no magnetism is observed. From the DFT studies, the band gap for the multilayers is indirect, and doping with Cr does not induce magnetic moments in MoS$_2$ layers. The band gap is observed to decrease with the multilayer thickness. The strain induced by substitutional Cr doping at the Mo site transforms the band gap in monolayer MoS$_2$ from direct to indirect. The defect states are produced within the band gap region close to the conduction band minimum., Comment: 32 pages, 13 figures

We performed X-ray photoelectron spectroscopy (XPS) measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and the capacitance of the thin film. The measurement consists of the application of 10 V DC or square wave pulses of 10 V amplitude to the sample at various frequencies ranging from 0.01 Hz to 1 MHz while recording X-ray photoemission data. To analyze the data, we propose three different models with varying degrees of accuracy. The calculated capacitance of SiNCs agrees with the experimental value in the literature.

X-ray Photoelectron Spectroscopy (XPS) is generally used for chemical analysis of surfaces and interfaces. This method involves the analysis of changes in binding energies and peak shapes of elements under consideration. It is also possible to use XPS to study the effect of X-ray radiation on the electrical properties of thin films. We measured the Si 2p peak using X-ray powers of 300 W and 150 W on approximately 135 nm silicon dioxide (SiO2) thin films grown on both n- and p-type substrates while applying DC or AC external biases. Using the shifts in the binding energy of the Si 2p peak, we calculated the resistances and the capacitances of the SiO2 thin film. The way that the binding energies of the Si 2p peak and the capacitance of the thin film change as a function of the type of Si substrate and the power of the X-ray are explained using band bending.

Constitutive models are essential for describing the mechanical behavior of materials under high temperatures and pressures, among which the Steinberg-Guinan (SG) model is widely adopted. Recent work has discovered a peculiar dual anomaly of compression-induced softening and heating-induced hardening in the elasticity of compressed vanadium [Phys. Rev. B 104, 134102 (2021)], which is beyond the capability of the SG model to describe. In this work, a modified SG constitutive model is proposed to embody such an anomalous behavior. Elemental vanadium is considered as an example to demonstrate the effectiveness of this improved model in describing the dual anomalies of mechanical elasticity. This new variant of the SG model can also be applied to other materials that present an irregular variation in the mechanical elasticity, and is important to faithfully model and simulate the mechanical response of materials under extreme conditions., Comment: 14 pages, 4 figures

First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS2. We explored the combined effects of vacancies and dipole interactions on the dielectric properties of few-layered MoS2. In the presence of dielectric screening, we investigated uniformly distributed Mo and S vacancies, and then considered the case of concentrated vacancies. Our results show that the dielectric screening remarkably depends on the distribution of vacancies owing to the polarization induced by the vacancies and on the interlayer distances. This conclusion was validated for a wide range of wide-gap semiconductors with different positions and distributions of vacancies, providing an effective and reliable method for calculating and predicting electrostatic screening of dimensionally reduced materials. We further provided a method for engineering the dielectric constant by changing the interlayer distance, tuning the number of vacancies and the distribution of vacancies in few-layered van der Waals materials for their application in nanodevices and supercapacitors.

The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, we use multi-color confocal microscopy and density functional theory to examine photo-induced SiV recombination - from neutral, to single-, to double-negatively charged - over a broad spectral window in chemical-vapor-deposition diamond under ambient conditions. For the SiV0 to SiV- transition, we find a linear growth of the photo-recombination rate with laser power at all observed wavelengths, a hallmark of single photon dynamics. Laser excitation of SiV-, on the other hand, yields only fractional recombination into SiV2-, a finding we interpret in terms of a photo-activated electron tunneling process from proximal nitrogen atoms.

Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged when deposited on textured or non-textured substrates. Here we analyzed the difference in growth of thin film silicon layers when deposited in a textured and a non-textured surface. In this investigation characteristics of two solar cells were compared, where one cell was prepared on a textured surface ( Cell-A) while the other prepared on a non-textured surface (Cell-B). Defect analysis of the devices were carried out by simulation and device modeling. It shows that the intrinsic film deposited on a textured surface was more defective ($2.4\times 10^{17}$ cm$^{-3}$) than that deposited on a flat surface ($3.2\times 10^{16}$ cm$^{-3}$). Although the primary differences in these two cells were thickness of the active layer and nature of surface texturing, the simulation results show that thin film deposited on a textured surface may acquire an increased defect density than that deposited on a flat surface. Lower effective flux density of $SiH_{3}$ precursors on the textured surface can be one of the reasons for higher defect density in the film deposited on textured surface. An Improved light coupling can be achieved by using a thinner doped window layer. By changing the thickness from 15 nm to 3 nm, the short circuit current density increased from 16.4 mA/cm$^{2}$ to 20.96 mA/cm$^{2}$ and efficiency increased from $9.4\%$ to $12.32\%$., Comment: 14 papes, 7 figs

Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($\textit{J}$$_{ex}$) and magnetic anisotropy energy to the development of the high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$., Comment: 25 pages, 4 figures

Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures., Comment: 20 pages, 5 figures, 1 table

In this work, we compare existing non-polarizable force fields developed to study the solid or solution phases of hybrid organic-inorganic halide perovskites with the AMOEBA polarizable force field. The aim is to test whether more computationally expensive polarizable force fields like AMOEBA offer better transferability between solution and solid phases, with the ultimate goal being the study of crystal nucleation, growth and other interfacial phenomena involving these ionic compounds. In the context of hybrid perovskites, AMOEBA force field parameters already exist for several elements in solution and we decided to leave them unchanged and to only parameterize the missing ones (Pb\textsuperscript{2+} and CH\textsubscript{3}NH\textsubscript{3}\textsuperscript{+} ions) in order to maximise transferability and avoid over-fitting to the specific examples studied here. Overall, we find that AMOEBA yields accurate hydration free energies (within 5\%) for typical ionic species while showing the correct ordering of stability for the different crystal polymorphs of CsPbI\textsubscript{3} and CH\textsubscript{3}NH\textsubscript{3}PbI\textsubscript{3}. While the existing parameters do not accurately reproduce all transition temperatures and lattice parameters, AMOEBA offers better transferability between solution and solid states than existing non-polarizable force fields.

Noncentrosymmetric triangular magnets offer a unique platform for realizing strong quantum fluctuations. However, designing these quantum materials remains an open challenge attributable to a knowledge gap in the tunability of competing exchange interactions at the atomic level. Here, we create a new noncentrosymmetric triangular S = 3/2 magnet CaMnTeO$_6$ based on careful chemical and physical considerations. The model material displays competing magnetic interactions and features nonlinear optical responses with the capability of generating coherent photons. The incommensurate magnetic ground state of CaMnTeO$_6$ with an unusually large spin rotation angle of 127 deg.(1) indicates that the anisotropic interlayer exchange is strong and competing with the isotropic interlayer Heisenberg interaction. The moment of 1.39(1) $\mu$B, extracted from low-temperature heat capacity and neutron diffraction measurements, is only 46% of the expected value of the static moment 3 $\mu$B. This reduction indicates the presence of strong quantum fluctuations in the half-integer spin S = 3/2 CaMnTeO$_6$ magnet, which is rare. By comparing the spin-polarized band structure, chemical bonding, and physical properties of AMnTeO$_6$ (A = Ca, Sr, Pb), we demonstrate how quantum-chemical interpretation can illuminate insights into the fundamentals of magnetic exchange interactions, providing a powerful tool for modulating spin dynamics with atomically precise control.

In recent studies, it has been discovered that phonons can carry angular momentum, leading to a series of investigations into systems with 3-fold rotation symmetry. However, for systems with 2-fold screw rotational symmetry, such as $\alpha$-MoO$_3$, there has been no relevant discussion. In this paper, we investigated the pseudoangular momentum of phonons in crystals with 2-fold screw rotational symmetry. Taking $\alpha$-MoO$_3$ as an example, we explain the selection rules in circularly polarized Raman experiments resulting from pseudoangular momentum conservation, providing important guidance for experiments. This study of pseudoangular momentum in $\alpha$-MoO$_3$ opens up a new degree of freedom for its potential applications, expanding into new application domains., Comment: 12 pages,2 figures

Kagome superconductors AV$_3$Sb$_5$ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV$_3$Sb$_5$. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors., Comment: 14 pages, 4 figures

Magnetic skyrmions, topologically nontrivial whirling spin textures at nanometer scales, have emerged as potential information carriers for spintronic devices. The ability to efficiently create and erase magnetic skyrmions is vital yet challenging for such applications. Based on first-principles studies, we find that switching between intrinsic magnetic skyrmion and high-temperature ferromagnetic states can be achieved in two-dimensional van der Waals (vdW) multiferroic heterostructure CrSeI/In2Te3 by reversing the ferroelectric polarization of In2Te3. The core mechanism of this switching is traced to the controllable magnetic anisotropy of CrSeI influenced by the ferroelectric polarization of In2Te3. We propose a useful descriptor linking the presence of magnetic skyrmions to magnetic parameters, and validate this connection through studies of a variety of similar vdW multiferroic heterostructures. Our work demonstrates that manipulating magnetic skyrmions via tunable magnetic anisotropies in vdW multiferroic heterostructures represents a highly promising and energy-efficient strategy for future development of spintronics., Comment: 20 Pages, 3 figures, 1 table; accepted by Nano Letters

This paper focuses on the development of the atomistic framework for determining the lower scale mechanical parameters of single components of a metal matrix composite for final application to a micromechanical damage model. Here, the deformation and failure behavior of NiAl-Al$_2$O$_3$ interfaces and their components, metal and ceramic, are analyzed in depth using molecular statics calculations. A number of atomistic simulations of strength tests, uniaxial tensile, uniaxial compressive and simple shear, have been performed in order to obtain a set of stiffness tensors and strain-stress characteristics up to failure for 30 different crystalline and amorphous systems. Characteristic points on the strain-stress curves in the vicinity of failure are further analyzed at the atomistic level, using local measures of lattice disorder. Numerical results are discussed in the context of composite damage at upper microscopic scale based on images of the fracture surface of NiAl-Al$_2$O$_3$ composites., Comment: 93 pages, 20 figures

Numerical simulation of a solar cell can provide various information that can be useful to maximize its power conversion efficiency (PCE). In that respect we carried out a set of numerical simulation using AFORS-HET simulation program. Separately, in order to get a better understanding, the optical absorption in individual layers devices were analyzed. Current-voltage characteristic curve of a reference cell (Cell-A) was used as the starting device. The PCE of the reference device was $8.85\%$ with short circuit current density $J_{sc}$ of 15.43 mA/cm$^{2}$ and fill factor (FF) of $68.3\%$. However, it was noticed that the reference cell had high parasitic optical absorption at the window layer and the device structure was also not optimized. After suitable optimization the PCE of this device (Cell-B2) improves to $11.59\%$ ($J_{sc}$ and FF of 13.0 mA/cm$^{2}$ and $87\%$ respectively). The results show that the effective optical absorption in the active layer can be improved significantly by optimizing the device structure. The short wavelength response can be improved by reducing the parasitic optical absorption by the doped window layer, while its long wavelength response improves by raising effective absorption length of the active layer. Furthermore, its optimum thickness, for the highest possible PCE, is found to be dependent upon the material properties, more importantly on its defect density., Comment: 21 pages, 14 Figs

This contribution aims at introducing first steps to develop hysteresis operator type inelastic constitutive laws for Cosserat rods for the simulation of cables composed of complex interior components. Motivated by the basic elements of Cosserat rod theory, we develop a specific approach to constitutive modelling adapted for this application. Afterwards, we describe the hysteretical behaviour arising from cyclic bending experiments on cables by means of the Preisach operator. As shown in pure bending experiments, slender structures such as electric cables behave inelastically, and open hysteresis loops arise with noticeable difference between the first load cycle and the following ones. The Preisach operator plays an important role in describing the input-output relation in hysteresis behaviours, and it can be expressed as a superposition of relay operators. Hence, a mathematical formulation of the problem is introduced, and a first attempt is made to determine the hysteresis behaviour that describes the relation between curvature and bending moment. Therefore, a suitable kernel function is identified in a way that its integration over the Preisach plane results in the bending moment of the specimen, and a comparison between different kernel functions is performed.