1. High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts
- Author
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Li, Yuzhi, Cai, Guangshuo, Tang, Biao, Zou, Shenghan, Lan, Linfeng, and Gong, Zheng
- Abstract
In this work, we proposed and demonstrated etch-stopper-layer (ESL) structured indium-gallium-zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with hybrid Ohmic/Schottky contacts utilizing single-layer Cu source/drain (S/D) electrodes. In this unique yet simple configuration, the AlOx layer deposited on the IGZO layer serves not only as a protection layer for the IGZO channel during S/D electrode etching but also as an interfacial layer for modulating the Schottky barrier of the Cu/IGZO contact. This, combined with quasi-Ohmic contact of Cu/IGZO, enables the formation of hybrid contacts based on a single-layer Cu electrode. The ESL-structured SBTFTs with hybrid contacts show a two-order magnitude increase in saturation current (
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- 2024
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