1. Spin Properties of Electrons in Low-Dimensional SiGe Structures
- Author
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Jantsch, W., Malissa, H., Wilamowski, Z., Lichtenberger, H., Chen, G., Schäffler, F., and Bauer, G.
- Abstract
Abstract: Using ESR, we investigate g-factor and spin coherence time tau of electrons confined in 2D Si
1–x Gex {channels} (x < 0.1) by barriers with x > 0.2 and in SiGe quantum dots grown on prepatterned Si substrates. The quantum wells exhibit 2D-anisotropy of both g and tau which can be explained in terms of the Bychkov–Rashba field. The latter increases with increasing Ge content in the well indicating that the increasing spin-orbit coupling is more important than interface properties. The narrow ESR permits selective spin manipulation already for x > 0.02. Large, regular arrays of Ge quantum dots (about 109 ) were grown on prepatterned substrates. Strain in the Si capping layer lowers the conduction band relative to that of Ge causing confinement. The g-shift observed implies the possibility of g-tuning by confinement. The line width shows substantial inhomogeneous broadening whereas the longitudinal spin lifetime is hardly changed with respect to 2D structures.- Published
- 2005
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